Patent
Nickel plating method
TLDR
In this paper, a simple method for plating nickel onto silicon which renders unnecessary any catalyzing pretreatment of the silicon surface which is to receive the nickel is presented. But this method is especially advantageous in plating Nickel onto silicon shallow junction devices for the purpose of providing ohmic contacts.Abstract:
A simple method for plating nickel onto silicon which renders unnecessary any catalyzing pretreatment of the silicon surface which is to receive the nickel. The method comprises the immersion of a silicon substrate in a suitable nickel bath in order that nickel ions in the bath will be reduced to solid nickel and deposited onto the substrate so as to form an adhering layer thereon. The method is especially advantageous in plating nickel onto silicon shallow junction devices for the purpose of providing ohmic contacts.read more
Citations
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Patent
Semiconductor electrical heater and method for making same
TL;DR: In this article, a method for mechanically and electrically bonding metallic materials and semiconductor materials was described, for example, in forming a semiconductor electrical heater, particularly for use in electrical smoking articles.
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Patent
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Patent
Method of fabricating solar cells.
TL;DR: A solar cell fabrication procedure is characterized by formation of a polysilazane coating (10) on a silicon substrate (2), photo-lithography of the polysilaxane coating to form a plating mask pattern (12A), a heating step which removes residual photoresist and converts the polysalazane covering to a denser form of silicon nitride (10A) having a reduced etch rate, and use of densified silicon dioxide as a mask for the plating of electrode metal (20) and also as an anti-reflection coating
References
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Patent
Manufacture of solar cells
TL;DR: In this paper, a method of producing solar cells having a composite shallow/deep junction device construction was proposed, where the solar cells have grid-like contacts on their front energy-receiving sides, with each portion of each contact being coincident.