Patent
Phase shift mask
TLDR
In this article, a phase shift mask was proposed to prevent the formation of a ghost image caused by diffraction and interference of light with the phase of 0 DEG and light with a phase of 180 DEG meeting upon forming a pattern by use of the mask of the Half-tone type mask.Abstract:
A phase shift mask capable of preventing the formation of a ghost image caused by diffraction and interference of light with the phase of 0 DEG and light with the phase of 180 DEG meeting upon forming a pattern by use of the mask of the Half-tone type mask. The phase shift mask includes a photoresist film pattern having a light transmitting portion and a light shielding portion, a phase shift layer adapted to shift the phase of light passing through the light shielding portion of the photoresist film pattern, and an assistant pattern adapted to remove unnecessary components of a main waveform of the light, which components are formed due to the diffraction of light at opposite sides of the main light waveform, the assistant pattern being comprised of a light transmitting portion for shifting the phase of a light incident thereon to 0 DEG .read more
Citations
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Patent
Structure and method of correcting proximity effects in a tri-tone attenuated phase-shifting mask
Christophe Pierrat,Youping Zhang +1 more
TL;DR: In this article, a structure and method for correcting the optical proximity effects on a tri-tone attenuated phase-shifting mask is provided. But the attenuated rim is not included in this paper.
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Radiation correction method for electron beam lithography
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Manufacturing method of electron device
Toshihiko Tanaka,Koshi Hattori +1 more
TL;DR: In this paper, a halftone phase shift mask fabricating Turn-Around-Time (TAT) was used to shorten the development time required for an electronic device, the production cost of which was also reduced.
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Method for manufacturing a semiconductor device using half-tone phase-shift mask to transfer a pattern onto a substrate
TL;DR: In this paper, a pattern is transferred to a resist film on a wafer by a reduction projection exposure method using a half-tone phase shift mask in which a thin-film pattern is used as an attenuator and a resist pattern functioning as the photosensitive composition for phase adjustment.
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Method and arrangement for preparing a charging plan
TL;DR: In this paper, the authors propose a method and an arrangement for preparing a charging plan for rock cavern excavation, in which plan drill hole locations for a round to be drilled in a tunnel face are determined in a predetermined coordinate system by using a drilling plan created by means of a computer assisted design program.
References
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Patent
Lithographic emhancement method and apparatus for randomly spaced structures
TL;DR: In this paper, a method of enhancing the lithographic resolution of randomly laid out isolated structures is disclosed, where a first mask comprises an active layer with isolated features such as gates, and a second mask exposes the complementary features so that they are removed from the latent image in the photosensitive layer.
Patent
Attenuating type phase shifting mask and method of manufacturing thereof
Nobuyuki Yoshioka,Junji Miyazaki +1 more
TL;DR: In this article, an attenuating type phase shifting mask according to the present invention includes a transmitting portion and a phase shifter portion formed at a predetermined position at the periphery of a phase shifting pattern.
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Multilevel resist plated transfer layer process for fine line lithography
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Patent
Process for producing a phase shift layer-containing photomask
Hiroshi c,o Dai Nippon Fujita,Masaaki c,o Dai Nippon Kurihara,Koichi c,o Dai Nippon Mikami,Hiroyuki c,O Dai Nippon Print. Co. Ltd Miyashita,Yoichi c,o Dai Nippon Takahashi +9 more
TL;DR: In this paper, a photomask blank for preparing a reticle for use in the production of integrated circuits comprises a substrate 30, an electrically conductive layer 31, a light-shielding thin film 32 and an ionizing radiation resist 33 formed of a coated spin-on-glass layer.
Patent
Method of manufacturing a photomask
Junji Miyazaki,Hitoshi Nagata +1 more
TL;DR: In this article, a mask pattern is transferred at a high resolution regardless of the configuration of a light shielding region, where a plurality of light shielding members are disposed on a transparent substrate spaced from and parallel to each other.