Patent
Photomask and method of crystallizing semiconductor thin film
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TLDR
In this article, a photomask consisting of a plurality of first mask sections 2a, 2b, and 2c was proposed to enable the formation of a high-quality polycrystalline material with a large crystal grain diameter.Abstract:
PROBLEM TO BE SOLVED: To provide a photomask which permits the formation of a high-quality polycrystalline material with a large crystal grain diameter. SOLUTION: The photomask comprises a plurality of first mask sections 2a, 2b, and 2c wherein a plurality of rectangular first slits 1 are each formed, and a second mask section 4 wherein a plurality of rectangular second slits 3 are formed. After conducting a treatment for making a grain diameter of polysilicon larger using the first mask section 2 wherein the first slits 1 are formed, projections 20 formed by this treatment are made lower using the second mask section 4 wherein the second slits 3 are formed. Consequently, a surface of a semiconductor thin film 21 can be flattened, resulting in the formation of a polysilicon TFT having superior electric properties. COPYRIGHT: (C)2004,JPOread more
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Line scan sequential lateral solidification of thin films
James S. Im,Paul C. van der Wilt +1 more
TL;DR: In this paper, an improved method of sequential lateral solidification of crystalline semiconductor film is presented, which consists of using a pulse laser to create two distinct zones of molten crystals.
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