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Piezoelectric thin-film element and piezoelectric thin-film device

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TLDR
In this article, a piezoelectric thin film element and a thin-film device are described, which can be produced in improved yields and can be used to improve the performance and efficiency of the PPI.
Abstract
Disclosed are a piezoelectric thin film element and a piezoelectric thin film device which have improved piezoelectric properties and high performance and can be produced in improved yields The piezoelectric thin film element ( 1 ) comprises: a substrate ( 10 ), and a piezoelectric thin film ( 40 ) which is arranged on the substrate ( 10 ), has at least one crystal structure represented by general formula (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦02, x+y+z=1) and selected from the group consisting of pseudo-cubic crystal, a hexagonal crystal, and an orthorhombic crystal, and contains an inert gas element at a ratio of 80 ppm or less by mass

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TL;DR: In this paper, the authors presented a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor.
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TL;DR: In this paper, a pair of electrodes and a piezoelectric layer sandwiched between the above-described pair of electrode layers are used to reduce the leakage current and enhance the reliability.
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TL;DR: In this article, the authors proposed a method to produce a lead-free ferroelectric film using a perovskite structure and a crystalline oxide preferentially oriented to (001) formed on at least one of the upper side and lower side of the (K1-XNaX)NbO3 film or BiFeO3 films.
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Method for manufacturing a piezoelectric film wafer, piezoelectric film element, and piezoelectric film device

TL;DR: In this paper, a method for manufacturing a KNN piezoelectric film wafer includes a first processing step for carrying out an ion etching on a kNN PE formed on a substrate by using a gas containing Ar, and a second processing step was carried out by using mixed etching gas containing a fluorine-based reactive gas and Ar after the first processing stage.
References
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Patent

Ink jet head

TL;DR: An ink-jet head which is used in an inkjet recorder and has outlets provided at high density is described in this paper, where the head comprises ink outlets, a pressure chamber communicating with the ink outlets and a piezoelectric vibrating section.
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Piezoelectric ceramic composition

Koseki Kenji
TL;DR: In this article, a piezoelectric ceramic composition was characterized in that the composition formula is represented by Pbx Bay Srz (B3+1/2B5+1 /2B3 + 1/2b5+ 1 /2) a Tib Zrc}O3, 093, the ingredient of B3+ is one kind of Sb, Bi, and La, and principal ingredient of Nb, and Ta
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Piezoelectric thin film element

TL;DR: In this paper, a perovskite-type oxide was used as the main phase of a piezoelectric thin-film element, and the bottom electrode had a surface roughness of 0.86 nm in arithmetic mean roughness Ra or not more than 1.1 nm in root mean square roughness Rms.
Patent

Thin film capacitor

TL;DR: In this paper, a dielectric thin capacitor with a first electrode having on its surface a (100) face of cubic system or a (001)-face of tetragonal system was shown to have a crystal structure which inherently belongs to a perovskite structure of cubic systems.
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Piezoelectric porcelain and method for preparation thereof

TL;DR: A piezoelectric porcelain substrate (1) consisting of a composition containing a perovskite type oxide (Na1-x-y-zK xLi y Agz)(Nb1-wTaw)O3 and a tungsten bronze type oxide M(Nb 1-vTav)2O6, wherein M is an element belonging to Group 2 of the long Periodic Table.