Patent
Semiconductor laser device and manufacture thereof
TLDR
In this paper, a double hetero junction structure is formed on the semiconductor substrate and a current blocking layer is added to prevent the deformation of the electrode in order to enable a current constricting structure to be formed.Abstract:
PURPOSE:To enable a current constricting structure to be formed in self-alignment with an optical waveguide structure and to prevent the increase in contact resistance between a contact layer and an electrode and the deformation of the electrode, by providing a contact layer having a second type of conductivity on a clad layer having the second type of conductivity and a current blocking layer. CONSTITUTION:A semiconductor laser device according to the present invention comprises a semiconductor substrate 11 having a first type of conductivity, a clad layer 14 having the first type of conductivity, an active layer 15 and clad layers 16-18 having a second type of conductivity and having a linear projection 18 thereon. A double hetero junction structure is thus formed on the semiconductor substrate 11. The semiconductor laser device further comprises a current blocking layer 21 formed on this double hetero junction structure except at least a part of the projection 18 of the clad layers having the second type of conductivity, and contact layers 20 and 22 having the second type of conductivity and formed on the second-conductivity-type clad layers 16-18 and the current blocking layer 21. For example, the semiconductor substrate 11 and the contact layers 20 and 22 may be formed of GaAs and the double hetero junction structure 14-18 may be formed of InGaAlP. Further, an InGaP buffer layer 13 of the first type of conductivity is provided between the GaAs substrate 11 and the InGaAlP clad layer 14 having the first type of conductivity.read more
Citations
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References
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Patent
Scroll type compressor
TL;DR: In this article, an annular attracting plate was used to control the opening and closing of holes in the side plate of a scroll member to permit superior facility control by forming fluid passing through holes closer to the center part from an ordinary fluid taking-in port.
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Semiconductor laser device
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Manufacture of semiconductor laser device
Kobayashi Masayoshi,Mori Mitsuhiro,Tsuji Shinji,Saitou Katsutoshi,Chiba Katsuaki,Mori Takao,Satou Nobu,Katou Hiroshi,Kobayashi Masamichi +8 more
TL;DR: In this article, the authors proposed a method to reduce the stress imposed on the inside of a semiconductor laser element and thus obtain one available for a long time operation by a method wherein, after die bonding, the device is heated again to a temperature over the melting point of solder and applied to the treatment to cool it in a state that a compression stress is impressed on the side surface of a sub mount.
Patent
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TL;DR: In this paper, the authors proposed a method to obtain a light deflecting function by holding an active layer which generates laser light by first and second semiconductor layers which have the larger forbidden band widths than the active layer, making the thickness of the second layer thin, and providing a semiconductor layer having a high refractive index layer at the back surface thereof.
Patent
Semiconductor laser device and manufacture thereof
Takashi Sugino,Akio Yoshikawa +1 more
TL;DR: In this paper, a photo resisto of (d) width is provided on the (100) plane of an N type GaAs substrate and then etching into the stripe projection 10a in the direction: the top surface makes an internal obtuse angle, and the internal angle made by the continuous side surface between the top surfaces should be less than 90°C.