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Patent

Semiconductor laser device including heat sink with pn junction

TLDR
A semiconductor laser device as mentioned in this paper is a type of device where the diode of the laser and the pn junction of the heat sink are electrically connected in parallel and in opposite polarity so that the Pn junction functions as a reverse current blocking diode for the laser.
Abstract
A semiconductor laser device includes a semiconductor laser chip containing a diode having a polarity; a heat sink on which the semiconductor laser chip is mounted at an interface of the semiconductor laser chip and the heat sink, the heat sink including a pn junction generally parallel to the interface; and a block on which the heat sink is mounted, wherein the diode of the semiconductor laser chip and the pn junction are electrically connected in parallel and in opposite polarity so that the pn junction of the heat sink functions as a reverse current blocking diode for the semiconductor laser chip.

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Patent

Semiconductor Light Emitting Device

TL;DR: In this article, the authors present a semiconductor light emitting device, consisting of a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, an active layer interposed between the first and the second semiconductors, and a non-conductive distributed bragg reflector coupled to the plurality of layers, reflecting the light from the active layer.
Patent

P-contact for GaN-based semiconductors utilizing a reverse-biased tunnel junction

TL;DR: In this paper, a light-generating device such as a laser or LED is generated by the recombination of holes and electrons in an n-p active layer, which includes a first p-doped layer in contact with a first n-doping layer, the first ndoped layers being connected electrically with the first p -electrode layer.
Patent

Methods, apparatus, and systems with semiconductor laser packaging for high modulation bandwidth

TL;DR: Semiconductor packaging methods, systems and apparatus for semiconductor lasers to achieve high modulation bandwidth have been described in this paper, where the inductance of wire bond interconnects and impedance matching in a semiconductor laser package are minimized.
Patent

Diode laser arrangement with a plurality of diode laser arrays

TL;DR: In this paper, a diode laser arrangement is disclosed wherein a radiation source is designed which can be scaled with respect to power such that different types of cooling can be applied and the configuration of the radiation field is suitable for adapting to different tasks in a simple manner.
Patent

Light-emitting diode and light-emitting diode lamp

TL;DR: In this paper, a light emitting diode (10) is provided with a substrate (101) composed of a first conductivity type silicon (Si) single crystal (101), and the light emitting section (40) on the substrate, which has a pn junction structure and is composed of group III nitride semiconductor.
References
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Patent

Laser diode assembly with tunnel junctions and providing multiple beams

TL;DR: In this paper, a laser diode assembly provides multiple output beams from multiple p-n junctions in a multiplicity of stacked laser diodes with at least one tunnel junction.
Patent

Semiconductor laser device

TL;DR: In this article, a photodiode can be used to detect the signal light emitted from the backside (rear end surface) of the light emitting surface of the semiconductor laser chip (1A) and the end surface of optical fiber (6) being opposed to each other.
Patent

Semiconductor laser device equipped with a silicon heat sink

TL;DR: In this article, the main surfaces of a semiconductor laser crystal body which generates heat during operation are brought into thermal contact with a silicon crystal heat-sink body, which is then used to generate heat.
Patent

AC driven laser diode array, power supply, transformer, and method therefor

TL;DR: In this article, an alternating current (AC) driven laser diode array and a power supply for the array is presented, in which all of the laser diodes in the array are in conductive heat transfer relation with a high thermal conductivity heat sink.
Patent

Semiconductor laser element

TL;DR: In this article, a GaAs/AlGaAs semiconductor laser element of this design is manufactured in the following manner: a third semiconductor layer 5 and a first semiconductor layers 3, whose energy gaps are large and refractive indexes are small, are provided sandwiching a second semiconductorlayer 4 in between them; the thickness of the semiconductor 3 is made equal to or smaller than the distance that light oozes out; a fourth semiconductor 6, which has an etching stop effect and is 500Angstrom or less in thickness.