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Institution

JDSU

CompanyMilpitas, California, United States
About: JDSU is a company organization based out in Milpitas, California, United States. It is known for research contribution in the topics: Laser & Optical fiber. The organization has 1673 authors who have published 1584 publications receiving 31308 citations. The organization is also known as: JDS Uniphase.


Papers
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Journal ArticleDOI
TL;DR: The lithium-niobate external-modulator technology meets the performance and reliability requirements of current 2.5-, 10-Gb/s digital communication systems, as well as CATV analog systems, and multiple high-speed modulation functions have been achieved in a single device.
Abstract: The current status of lithium-niobate external-modulator technology is reviewed with emphasis on design, fabrication, system requirements, performance, and reliability. The technology meets the performance and reliability requirements of current 2.5-, 10-, and 40-Gb/s digital communication systems, as well as CATV analog systems. The current trend in device topology is toward higher data rates and increased levels of integration. In particular, multiple high-speed modulation functions, such as 10-Gb/s return-to-zero pulse generation plus data modulation, have been achieved in a single device.

1,221 citations

Journal ArticleDOI
11 Nov 2004-Nature
TL;DR: Simulations show that the ring lasers with extremely small size and low operating power presented here have the potential for much smaller dimensions and switching times, and large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit.
Abstract: The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information1. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data2. Recently, ring lasers with extremely small size and low operating power have been made3,4,5,6,7, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

621 citations

Journal ArticleDOI
TL;DR: In this article, a dc-current-induced reversible insulator-conductor transition with resistance changes of up to five orders of magnitude was found in doped SrTiO3 single crystals.
Abstract: Materials showing reversible resistive switching are attractive for today’s semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator–conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

578 citations

Patent
John O. Smiley1, Robert LaFlamme1
24 Nov 1998
TL;DR: An optical attenuator for attenuating a collimated beam of light propagating along an optical path while preserving the composition of polarization of the collimated beacon of light is disclosed in this paper.
Abstract: An optical attenuator for attenuating a collimated beam of light propagating along an optical path while preserving the composition of polarization of the collimated beam of light is disclosed. The optical attenuator comprises a beam attenuator for attenuating a portion of the collimated beam of light when a portion of the beam attenuator is disposed within the optical path. The beam attenuator has a cross section along a plane perpendicular to the direction of propagation of the collimated beam of light of the portion of the attenuator in the shape of a wedge. The attenuation is varied using a controller for moving the beam attenuator in order to vary a size of the portion of the wedge within the optical path.

347 citations

Journal ArticleDOI
TL;DR: It is shown that the V2O5 sheets provide high Young's modulus, high actuator-generated stress, andhigh actuator stroke at low applied voltage, which facilitates electrochemical charge injection and intercalation that causes the electromechanical actuation.
Abstract: Vanadium oxides, such as V2O5, are promising for lithium-ion batteries, catalysis, electrochromic devices and sensors. Vanadium oxides were proposed more than a decade ago for another redox-dependent application: the direct conversion of electrical energy to mechanical energy in actuators (artificial muscles). Although related conducting polymer and carbon nanotube actuators have been demonstrated, electromechanical actuators based on vanadium oxides have not be realized. V2O5 nanofibres and nanotubes provide the potential advantages of low-cost synthesis by sol-gel routes and high charging capacity and long cycle life. Here, we demonstrate electromechanical actuation for obtained high modulus V2O5 sheets comprising entangled V2O5 nanofibres. The high surface area of these V2O5 sheets facilitates electrochemical charge injection and intercalation that causes the electromechanical actuation. We show that the V2O5 sheets provide high Young's modulus, high actuator-generated stress, and high actuator stroke at low applied voltage.

239 citations


Authors

Showing all 1694 results

NameH-indexPapersCitations
Paul B. Corkum8857637200
David J. Moss7570117695
Feng Pan6347314429
Donald R. Scifres513559485
Russell A. Chipman392896147
Dahv A. V. Kliner391174720
Heonsu Jeon362215278
Roger L. Farrow351513678
Roger W. Phillips34813550
David F. Welch33912973
Michael R. E. Lamont32894125
Robert R. McLeod301873126
James Galloway292334105
Jens W. Tomm292432615
Mehrdad Ziari291563086
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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
202314
20228
20211
20202
20171
20163