Patent
Semiconductor tunnel junction with enhancement layer
John F. Klem,John C. Zolper +1 more
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TLDR
In this article, a pseudomorphic GaAsSb layer was incorporated in a runnel diode structure to allow a new degree of freedom in designing runnel junctions for p-n junction device interconnects.Abstract:
The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.read more
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Patent
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Journal ArticleDOI
Design prospects of cadmium telluride/silicon (CdTe/Si) tandem solar cells from numerical simulation
F. M.T. Enam,Kazi Sajedur Rahman,M. I. Kamaruzzaman,K. Sobayel,Puvaneswaran Chelvanathan,Badariah Bais,Md. Akhtaruzzaman,Abdulrahman M. Alamoud,Nowshad Amin,Nowshad Amin +9 more
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Patent
Long wavelength VCSEL device processing
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Monolithic tandem solar cell
TL;DR: In this paper, a single-crystal, monolithic, tandem, photovoltaic solar cell is described, which includes an InP substrate having upper and lower surfaces, a first photoactive subcell on the upper surface of the substrate, and (c) a second photoactive subsample on the first subcell.
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Patent
Tunnel junction multiple wavelength light-emitting diodes
Jerry M. Olson,Sarah R. Kurtz +1 more
TL;DR: In this paper, a multiple-wavelength LED with a monolithic cascade cell structure comprising at least two p-n junctions is considered, where each of the p n junctions has substantially different band gaps and each diode comprises a tunnel junction or interconnect.
Patent
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TL;DR: In this article, a three-terminal ternary III-V two-color solar cells incorporating layers of GaAs1-x-y Px Sby was proposed.