Patent
Silicon carbide junction thermistor
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TLDR
In this article, a high impedance, junction thermistor for sensing temperatures from about -200*C to above 1,400*C is provided with a semiconductor body of silicon carbide.Abstract:
A high impedance, junction thermistor for sensing temperatures from about -200*C. to above 1,400*C. is provided with a semiconductor body of silicon carbide. The silicon carbide semiconductor body has at least first and second impurity regions forming a PN junction therebetween. The temperature is sensed by the impedance response across the PN junction.read more
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Patent
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References
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Patent
Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
John M Blank,Ralph M. Potter +1 more
TL;DR: In this paper, a SiC electroluminescent PN junction diode is grown by diffusing B and Al into N-doped α-SiC crystals.
Patent
Silicon carbide semiconductor device with heavily doped silicon carbide ohmic contacts
TL;DR: In this paper, the body of a silicon carbide has at least two regions of opposite type semiconductivity with a pin junction between them, and an electrical contact is affixed to each region.