Patent
Transverse ultra-thin insulated gate bipolar transistor having high current density
TLDR
In this paper, a transverse ultra-thin insulated gate bipolar transistor (TIGB) has been proposed to increase the current density of an intelligent power module, which significantly improves the performance of the power module.Abstract:
A transverse ultra-thin insulated gate bipolar transistor having current density includes: a P substrate, where the P substrate is provided with a buried oxide layer thereon, the buried oxide layer is provided with an N epitaxial layer thereon, the N epitaxial layer is provided with an N well region and P base region therein, the P base region is provided with a first P contact region and an N source region therein, the N well region is provided with an N buffer region therein, the N well region is provided with a field oxide layer thereon, the N buffer region is provided with a P drain region therein, the N epitaxial layer is provided therein with a P base region array including a P annular base region, the P base region array is located between the N well region and the P base region, the P annular base region is provided with a second P contact region and an N annular source region therein, and the second P contact region is located in the N annular source region. The present invention greatly increases current density of a transverse ultra-thin insulated gate bipolar transistor, thus significantly improving the performance of an intelligent power module.read more
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Patent
Wireless power transmission with selective range
TL;DR: In this article, the authors describe a methodology for wireless power transmission based on pocket-forming, which may include one transmitter and at least one or more receivers, being the transmitter the source of energy and the receiver the device that is desired to charge or power.
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Wireless charging and powering of electronic devices in a vehicle
TL;DR: In this article, the configurations and methods of wireless power transmission for charging or powering one or more electronic devices inside a vehicle are disclosed and a transmitter capable of single or multiple pocket-forming may be connected to a car lighter, where this transmitter may include a circuitry module and an antenna array integrated within the transmitter, or operatively connected through a cable.
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Douglas Bell,Michael A. Leabman +1 more
TL;DR: In this paper, the authors describe a wireless power transmission system that includes a processing apparatus with a processor; a data storage; and one or more wireless power transmitters each including at least two antennas, and the processing apparatus causes transmission of the RF waves by the transmitters in accordance with determining that the at least one userspecified circumstance is not present at the respective electronic device.
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Transmitters for wireless power transmission
TL;DR: The present disclosure may provide various electric transmitter arrangements which may be used to provide wireless power transmission (WPT) while using suitable WPT techniques such as pocket-forming as mentioned in this paper.
References
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Patent
Power mos transistor
TL;DR: In this paper, a power MOS transistor has a structure with a channel region 4 formed in the surface layer part of an n-type well layer 3 in a semiconductor substrate, and moreover, a p body region 6 which is deeper than the region 4 is formed in a p-type impurity diffusion embedded layer 16 is extendedly provided from the layers 15 to the lower part of the region 6.
Patent
Power MOS transistor
Kenji Kouno,Shouji Mizuno +1 more
TL;DR: In this article, a new and improved power MOS transistor having a protective diode with an increased breakdown voltage difference and less sheet resistivity is disclosed, where an n-type well layer has its top surface in which an elongated p-type base region is provided adjacent to a deep n + -type region.
Patent
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High-speed MOS-technology power device integrated structure, and related manufacturing process
Giuseppe Ferla,Ferruccio Frisina +1 more
TL;DR: In this article, a high-speed MOS-technology power device integrated structure comprises a plurality of elementary functional units formed in a lightly doped semiconductor layer (1) of a first conductivity type, the elementary functional unit comprising channel regions (6) of the second conductivity types covered by a conductive insulated gate layer (8) comprising a polysilicon layer (5); the conductive gate layer also comprises a highly conductive layer (9) superimposed over said poly-silicon (5) layer and having a resistivity much lower than the resist
Patent
Silicon integrated high-current N type combined semiconductor device on insulator
TL;DR: In this paper, a silicon integrated high-current N type combined semiconductor device on an insulator, which can improve the current density, is described, and the device area is not increased and other performances of the device are not reduced.