F
Ferruccio Frisina
Researcher at STMicroelectronics
Publications - 130
Citations - 1331
Ferruccio Frisina is an academic researcher from STMicroelectronics. The author has contributed to research in topics: Layer (electronics) & Body region. The author has an hindex of 20, co-authored 130 publications receiving 1318 citations.
Papers
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Journal ArticleDOI
Innovative localized lifetime control in high-speed IGBTs
TL;DR: In this paper, an innovative method to control carrier lifetime locally and efficiently in Insulated Gate Bipolar Transistors (IGBTs) is presented based on the formation of void layers by low-energy and high-dose He implants and annealing.
Patent
Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure
TL;DR: In this paper, a method of manufacturing an edge structure for a high voltage semiconductor device, including a first step of forming a first semiconductor layer of a first conductivity type, a second step of formulating a first mask over the top surface of the first semiconducting layer, a third step of removing portions of the mask in order to form at least one opening in it, a fourth step of introducing dopant of a second conductivities type in the first and second semiconductors through the opening, a fifth step of completely removing the first mask and of forming
Patent
MOS technology power device with low output resistance and low capacity and related manufacturing process
TL;DR: In this article, a MOS-gated power device includes a plurality of elementary functional units, each elementary functional unit including a body region of a first conductivity type formed in a semiconductor material layer of a second conductivities type having a first resistivity value.
Patent
Single feature size MOS technology power device
TL;DR: In this article, a MOS technology power device comprises a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor materials layer, and a plurality of elementary functional units.
Journal ArticleDOI
Thermal instability of low voltage power-MOSFETs
TL;DR: In this article, an anomalous failure mechanism detected on last generation low voltage power metal oxide semiconductor (MOS) devices at low drain current was analyzed. And the authors showed that the thermal instability is a side effect of the progressive die size and process scaling down.