Patent
Tunnel diode load for ultra-fast low power switching circuits
TLDR
In this article, an active multi-terminal switching device such as a transistor in electric series connection with a tunnel diode load discharges, or charges, the output node between tunnel diodes and transistor upon activating, or deactivating, the transistor by appropriate input signals.Abstract:
An active multi-terminal switching device such as a transistor in electric series connection with a tunnel diode load discharges, or charges, the output node between tunnel diode and transistor upon activating, or deactivating, the transistor by appropriate input signals. The negative current-voltage characteristics of the forward biased tunnel diode provides a large load resistance, and thus causes a low current level, during the stationary on-state of the transistor, but it also provides a small load resistance during most of the transient when the transistor is turned off, and thus causes a fast switching speed. A tunnel diode connected between gate and source of an enhancement mode n-channel GaAs junction field effect phototransistor enhances the recovery of the transistor after the activating light beam is switched off.read more
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Patent
Method for fabricating a semiconductor structure including a metal oxide interface with silicon
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Patent
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Semiconductor device including a tunnel effect element
TL;DR: In this article, the first tunnel diode is formed in a first interface region between the first impurity diffusion region and the first channel region when the first preset voltage is applied to the gate electrode.
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Electro-optic structure and process for fabricating same
TL;DR: In this paper, an accommodating buffer layer is proposed for oxide-based electro-optic devices with III-V based photonics and Si circuitry, where waveguides are formed of high quality monocrystalline material atop the buffer layer.
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Journal ArticleDOI
High-speed integrated logic with GaAs MESFET's
R.L. Van Tuyl,C. Liechti +1 more
TL;DR: In this article, the feasibility of using GaAs metal-semiconductor field effect transistors (GaAs MESFETs) in fast switching and high-speed digital integrated circuit applications is demonstrated.