Whats the hardness of raw CK45 in HV4 answersThe hardness of raw CK45 steel is typically measured in Vickers hardness (HV). Research on boriding of CK45 steel after induction hardening showed that the hardness of the borided sample was evaluated using a Vickers indenter, indicating an increase in hardness due to the boriding process. Additionally, a study on natural gas cylinder steel type CK45 involved analyzing the hardness of CK45 samples, which were subjected to corrosion testing. The results showed variations in hardness due to different corrosion conditions, including static corrosive medium and mechanical vibration-induced corrosion. Although the specific HV value for raw CK45 steel is not explicitly mentioned in the contexts, the hardness can be enhanced through processes like boriding and can vary based on environmental conditions like corrosion.
How to make 4H Silicon carbide wafer?5 answersTo manufacture 4H silicon carbide (SiC) wafers, several methods are employed. One approach involves growing 200 mm diameter n-type 4H SiC wafers using a physical vapor transport (PVT) method, modifying the growth cell to enhance crystal size and deposition rate, resulting in wafers with uniform resistivity and acceptable defect densities. Another method includes epitaxially growing SiC films on 4H-SiC substrates using SiCl4, CH4, and H2 precursors at varying temperatures to achieve different crystal phases. Chemical-mechanical polishing (CMP) is crucial for planarization, enhancing surface quality and reducing costs, with various approaches like chemical, mechanical, and synergistic methods being employed. Additionally, a method involves laser irradiation of SiC crystal ingots with gas sources to accelerate separation and produce high-quality SiC wafers efficiently.
Which types of defects are most detrimental to the performance of SiC solar cells?4 answersDefects in SiC solar cells that have the most detrimental impact on performance include substrate dislocations, stacking faults, and defects induced by light illumination and electron irradiations. These defects can lead to decreased device performance, increased leakage, and reduced conversion efficiency. Substrate dislocations, such as basal plane dislocations (BPDs), have been found to nucleate into epitaxial stacking faults, resulting in device failures and decreased yield. Surface defects, induced after the i-p/i-n junction formation in silicon heterojunction cells, have also been shown to significantly impact performance, with a relative power loss of 8% and a drop in voltage at the maximum power point. Therefore, reducing or eliminating these defects is crucial for improving the performance and yield of SiC solar cells.
What are the current challenges in the sic process?5 answersThe current challenges in the sic process include the ability of a university to identify a target company for a given technology, the ability of scientists to identify and locate technologies of interest, and the slowness and inflexibility of universities in formulating agreements. In addition, the security aspects in ad hoc networks pose challenges due to the variation in networking approaches and the need to balance security and performance. The semiconductor industry faces challenges in the uniform and homogeneous deposition of silicon carbide on large components, requiring knowledge of gas flow in the CVD reactor. Implementing International Financial Reporting Standards (IFRS) at the organizational level presents challenges such as lack of education and training, securing executive-level support, and capturing necessary information for reporting. Short food supply chains (SFSCs) encounter issues in their creation and functioning, leading to limited performance and difficulties in upscaling. These issues occur at various parts of SFSCs and can be characterized using the SCOR model.
What is the crystal structure of SiC?5 answersSiC has a crystal structure that can be described as a combination of hexagonal close packed (hcp) and face centered cubic (fcc) structures. The SiC structure consists of a SiC substrate with both hcp and fcc structures, and it has either an hcp surface or an fcc surface. The hcp surface is characterized by atoms in the topmost layer whose rows overlap with rows of atoms in the third layer, while the fcc surface has atoms in the topmost layer whose rows are different from rows of atoms in the third layer. Additionally, SiC film structures can be formed using a vapor phase epitaxial film formation method, resulting in a three-dimensional shape made of SiC film.
Why is 4H-SiC a promising material for high-power electronics?5 answers4H-SiC is a promising material for high-power electronics due to its wide-bandgap, high breakdown field, saturation drift velocity, and thermal conductivity. These properties make it suitable for producing power devices such as superjunctions. Additionally, 4H-SiC devices have the advantage of being able to operate at significantly higher junction temperatures compared to silicon, resulting in higher power densities. The use of 4H-SiC in power modules, with technologies such as silver sintering for die-attach and top-side copper wire bonding, has shown increased lifetime and reliability compared to traditional soldering and aluminum wire bonding methods. Overall, the combination of its material properties and advanced interconnection technologies make 4H-SiC a promising choice for high-power electronics applications.