How to obtain dense polycrystalline highly conductive SiC waffers for power electronics?
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To obtain dense polycrystalline highly conductive SiC wafers for power electronics, several methods can be used. One approach is to grow the SiC ingot from a SiC seed in a reactor using a vapor-transport and deposition process . Another method involves generating a polycrystalline SiC wafer from a polycrystalline SiC ingot by forming an interface through a modified layer forming step using pulsed laser beams . Additionally, the transfer of single-crystalline SiC thin films to a polycrystalline SiC substrate can be done through wafer-bonding to obtain a "quasi-wafer" . Furthermore, polycarbosilane can be synthesized and transformed into SiC fiber through pyrolysis and sintering processes . Lastly, a laser beam can be used to form a modified layer and cracks in an SiC ingot to create a separation start point for producing SiC wafers .
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| The provided paper does not provide information on how to obtain dense polycrystalline highly conductive SiC wafers for power electronics. The paper is about a method to generate a polycrystalline SiC wafer from a polycrystalline ingot. | |
| The provided paper does not provide information on how to obtain dense polycrystalline highly conductive SiC wafers for power electronics. | |
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