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What are the best mobility models for describing reverse-biased p-n junction in Si? 


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The best mobility models for describing reverse-biased p-n junctions in Si are not explicitly mentioned in the provided abstracts. However, the papers by Wei et al. and Acharyya et al. discuss the simulation and behavior of p-n junctions in Si-based materials . These papers focus on the adjustment of physical model parameters and the study of quantum mechanical behavior in nano-scale p-n junctions. The paper by Ubaldi et al. discusses the importance of understanding the electrostatic field and dopant distribution in reverse-biased p-n junctions, but does not specifically mention mobility models . Therefore, further research or references may be required to determine the best mobility models for describing reverse-biased p-n junctions in Si.

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The provided paper does not mention anything about mobility models for describing reverse-biased p-n junctions in Si.
The provided paper does not discuss the best mobility models for describing reverse-biased p-n junction in Si.
The provided paper is about realistic simulations on reverse junction characteristics of SiC and GaN power semiconductor devices. It does not provide information about the best mobility models for describing reverse-biased p-n junction in Si.
The provided paper does not mention the best mobility models for describing reverse-biased p-n junctions in Si.
The provided paper does not mention the best mobility models for describing reverse-biased p-n junction in Si.

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