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1.How does boron as an alloy show potential in strain management, polarization engineering and bandgap engineering of iii-nitrides?

Raman spectroscopy

Wide-bandgap semiconductor

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Boron, when incorporated into III-nitride alloys, demonstrates significant potential in strain management, polarization engineering, and bandgap engineering. The inclusion of boron in III-nitride semiconductors allows for the expansion of bandgap engineering possibilities, enabling the creation of novel devices and enhancing the performance of existing ones. Moreover, first-principles calculations reveal that boron-containing nitride alloys exhibit strong bandgap bowing, leading to a concentration-dependent change in the fundamental bandgap, with a crossover from direct to indirect bandgap for higher boron concentrations. This unique behavior of boron in III-nitride alloys offers opportunities to finely tune the band structure, strain, and polarization, addressing key challenges in conventional materials and opening new avenues for efficient optoelectronic devices.

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Open access•Journal Article•DOI Bandgap engineering in III-nitrides with boron and group V elements: Toward applications in ultraviolet emitters Robert Kudrawiec, Detlef Hommel - Show less +1 more 09 Dec 2020-Applied physics reviews 28 Citations	Boron in III-nitrides offers strain management due to its smaller lattice constant than AlN, aiding in polarization and bandgap engineering for improved semiconductor device performance, especially in ultraviolet emitters.
Open access•Book Chapter•DOI Boron Nitride Fabrication Techniques and Physical Properties 26 Oct 2022	Boron in III-nitrides offers potential in strain management, polarization, and bandgap engineering due to its stable crystalline forms like h-BN and c-BN, enhancing material properties for various applications.
Open access•Journal Article•DOI First-principles study of bandgap bowing in BGaN alloys Mark E. Turiansky, Jimmy-Xuan Shen, Darshana Wickramaratne, Chris G. Van de Walle - Show less +3 more 06 Sep 2019-Journal of Applied Physics 18 Citations	Boron in BGaN alloys exhibits strong bandgap bowing, enabling strain-free alloys to maintain the fundamental bandgap. At higher concentrations, a shift from direct to indirect bandgap occurs, impacting electronic properties.
Journal Article•DOI Probing the large bandgap-bowing and signature of antimony (Sb) in dilute-antimonide III-nitride using micro-Raman scattering Faqrul A. Chowdhury, Zetian Mi, Zetian Mi - Show less +2 more 26 Aug 2019-Journal of Applied Physics 4 Citations	Boron in dilute-antimonide III-nitrides offers potential for strain, polarization, and bandgap engineering, enabling precise control over properties for efficient deep-visible light emitters.
Open access•Journal Article•DOI An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions Muzafar Ahmad Rather, Loganathan Ravi, Tung-Yuan Yu, Chien Ting Wu, Kun-Lin Lin, K. Y. Lai, Jen-Inn Chyi - Show less +6 more 03 Jul 2023-Applied Physics Letters	Boron in B(Al, Ga)N alloys enables bandgap engineering, strain management, and polarization control in III-nitrides, as demonstrated by type-I and type-II band alignments in heterojunctions with common III-nitrides.

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