What is hysteresis in vortex induced vibration ?
Best insight from top research papers
Hysteresis in vortex-induced vibration refers to the phenomenon where the response of a structure to fluid flow depends on the history of the flow conditions. It is observed in the frequency variations and modal responses of flexible cylinders subjected to vortex-induced vibrations . The hysteresis behavior is characterized by the presence of different branches in the frequency response curves, with different frequency ratios appearing in each branch . The hysteresis is attributed to the nonlinear modal interactions and the transition between excited structural modes coupled with the cylinder wake . The effect of hysteresis is also influenced by factors such as the mass ratio, blockage, and damping . The presence of hysteresis has implications for the design of structural dampers and energy harvesters .
Answers from top 5 papers
More filters
| Papers (5) | Insight |
|---|---|
48 Citations | Hysteresis in vortex-induced vibration refers to the phenomenon where the response of a vibrating cylinder lags behind changes in the flow conditions, resulting in a loop-shaped response curve. |
Open access•Posted Content | Copilot couldn't generate the response. Please try again after some time. |
25 Citations | Hysteresis in vortex-induced vibration refers to the observed difference in the dynamic response of a flexible cylinder depending on whether the flow speed is increased or decreased. This difference is attributed to hysteresis in the transition between excited structural modes coupled with the cylinder wake. |
| Hysteresis in vortex-induced vibration refers to the phenomenon where the response of a flexible cylinder to vortex-induced vibrations depends on the previous history of the flow conditions. | |
| The paper does not provide a direct explanation of hysteresis in vortex-induced vibration. |
Related Questions
What is hysteresis error?4 answersHysteresis error refers to the discrepancy between the expected and actual output of a system due to the non-linear behavior of the system. It is a common phenomenon in various fields such as control systems, cutting devices, machine error estimation, magnetic circuits, and tactile sensors. In control systems, hysteresis control methods are used to limit the current error within a square rotating with the coordinate axis. In cutting devices, hysteresis error compensation control systems are employed to improve the robustness of the system by compensating for hysteresis nonlinearity. In machine error estimation, hysteresis effects are considered in the error model to identify errors in linear axes machines. In magnetic circuits, hysteresis error can occur due to the coil current, and techniques such as measuring yoke minor hysteresis loops are used to estimate and suppress this effect. In tactile sensors, hysteresis is a source of error that can be reduced using the generalized Prandtl-Ishlinskii model and inversion techniques.
What is period doubling bifurcation? in vortex induced vibration?5 answersPeriod doubling bifurcation in vortex-induced vibration refers to a phenomenon where the response of the system transitions from a period-1 motion to a period-n motion, where n is greater than 1. This bifurcation occurs in the post-synchronous regime of the system, where the response of the cylinder is no longer synchronized with its natural frequency. The variation of the onset of synchronization and its spectrum over the range of Reynolds number can be depicted using bifurcation diagrams. In the case of a top tension riser (TTR) subject to shear flow VIV, the VIV response of the TTR exhibits Hopf bifurcation phenomena with bistable characteristics. The understanding of these bifurcation phenomena can provide insights for the design and optimization of riser structural parameters.
J–V hysteresis characteristic of PSCs?5 answersJ–V hysteresis is a characteristic of perovskite solar cells (PSCs) that refers to the difference in performance between the forward and backward scans of the current density-voltage (J-V) curve. It has been observed that the backward scan often shows higher performance than the forward scan. The hysteresis effect is influenced by various factors such as ion migration, charge-carrier mobility, and interface features at the ETL/perovskite interface. Drift-Diffusion Modeling (DDM) has been used to study the hysteresis behavior associated with ion migration and the role of flux parameters in reducing hysteresis. The problem of hysteresis in PSCs is closely linked to ion migration, ferroelectric effects, capacitive effects, and trap-assisted recombination processes. Internal and external factors contribute to J-V hysteresis, and various strategies have been proposed to alleviate this phenomenon and improve device performance. A dynamic electrical model has been developed to explain the shape of the hysteresis and the appearance of the 'bump' in the reverse scan of the J-V characteristics.
How can vortex-induced vibrations be mitigated in proximity to a bottom boundary?5 answersVortex-induced vibrations (VIV) in proximity to a bottom boundary can be mitigated through various methods. One approach is to use a suppression element that consists of interconnected specimens with helical fin structures, which effectively reduces VIV. Another method involves the use of a vortex-induced vibration suppression experimental device based on a nonlinear energy trap, which effectively suppresses VIV through adjustable parameters such as mass, rigidity, and damping. Additionally, the placement of plasma actuators on the surface of a cylinder can control VIV by transferring momentum to the fluid, thereby suppressing vibrations. The behavior of VIV near a bottom boundary is influenced by factors such as the placement of cylinders, the presence of a stationary wall, and the interactions of vortices with the boundary layer. These studies provide insights into the mechanisms and strategies for mitigating VIV in proximity to a bottom boundary.
Area of hysteresis in memory devices4 answersThe area of hysteresis in memory devices can vary depending on different factors such as the type of material used and the presence of light illumination. In the case of fully solution processed aluminium oxide (ALPO) dielectric based devices, a large variation of memory hysteresis of 810mV was obtained with respect to different light illuminations. In the case of nanocrystal embedded metal-oxide-semiconductor (NC-MOS) capacitors, a hysteresis of 2V was demonstrated, which is large enough to enable the use of nanocrystal embedded devices as memory devices. Hybrid organic-inorganic perovskite materials also exhibit hysteresis in memory devices, with the memory device showing an operating voltage as low as 0.25V. The area within the hysteresis loop in a memristor driven by a periodical voltage or current is directly related to the value of action potential.
What are the causes of negative hysteresis?0 answersNegative hysteresis can be caused by various factors. In magnetoelastic torque transducers, the negative hysteresis effect is believed to be of magnetic origin, resulting from axial magnetization of unpolarized material radially inward of the circumferentially polarized band. In the case of a differential amplifier, negative hysteresis is achieved through automatic reference voltage adjustment, where a delayed output signal is routed to select one of two reference voltage levels. In the behavioral dynamics of affordance graspable, negative hysteresis is observed, but the specific causes are not mentioned in the abstract. In the macroeconomic context, hysteresis in major variables can emerge from the decentralized interactions of firms and workers, due to coordination externalities and dynamic increasing returns. In the study of hydriding and dehydriding transitions in metal hydrides, hysteresis is explained by a dissipative potential barrier that impedes the motion of the interface due to interactions between lattice defects and the two-phase interface.