What is self-doping in the context of semiconductors?
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Self-doping in the context of semiconductors refers to a method of increasing carrier concentrations in organic electronics without the need for external molecular dopants. It involves the use of self-doped organic semiconductors, which can be achieved by incorporating sterically encumbered ammoniums with short tethers and Lewis basic counterions . Self-doping eliminates the requirement to tailor host-dopant miscibility, making it a more convenient approach for increasing carrier concentrations . The efficiency, stability, morphology, and charge-carrier mobility of self-doped organic semiconductors are influenced by factors such as steric encumbrance, counterion selection, and dopant/PDI tether distance . In addition, water is found to inhibit self-doping, suggesting that thermal degradation is primarily driven by residual solvent evaporation . The design principles for self-doped materials include the use of sterically encumbered ammoniums, short tethers, and Lewis basic counterions .
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2 Citations | The provided paper does not specifically mention the term "self-doping" in the context of semiconductors. |
| Self-doping in semiconductors refers to the process of increasing carrier concentrations without the use of external dopants, by incorporating electron sources such as amines or ammonium counterions into the material itself. | |
| Self-doping in the context of semiconductors refers to the process of increasing carrier concentrations in organic electronics without the use of extrinsic molecular dopants. | |
| Self-doping is a doping method applied to organic semiconductors, but the paper does not provide a specific definition or explanation of self-doping. | |
| Self-doping is a doping method used in organic semiconductors, but the paper does not provide a specific definition or explanation of self-doping. |
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