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Showing papers on "Barrier layer published in 1975"


Patent
05 Nov 1975
TL;DR: In this article, a material which comprises a laminate of a fibrous layer such as a felt which can be impregnated with curable synthetic resin, and bonded to the felt is a membrane comprises three layers namely an inner layer of a low softening point material, a barrier layer which represents a barrier to the aggressive components of the resin such as the styrene, and an outer layer bonded on the outside of the fibrous layers to provide for the application of patches and sealing tapes by heat or solvent welding.
Abstract: The present invention provides a material which comprises a laminate of a fibrous layer such as a felt which can be impregnated with curable synthetic resin, and bonded to the felt is a membrane comprises three layers namely an inner layer of a low softening point material bonded to the felt, a barrier layer which represents a barrier to the aggressive components of the resin such as the styrene, and an outer layer bonded to the outside of the fibrous layer to provide for the application of patches and sealing tapes by heat or solvent welding.

213 citations


Journal ArticleDOI
TL;DR: In this article, the micropores of various kinds of anodic oxide films on aluminum were electrodeposited into the barrier layer and fine granular metals precipitated on the barrier layers and formed columnar structures.
Abstract: Cobalt and Co‐Ni alloy were electrodeposited into the micropores of various kinds of anodic oxide films on aluminum. Fine granular metals precipitated on the barrier layer and formed columnar structures. Although the films of cobalt or nickel showed remarkable magnetic anisotropies perpendicular to the surface, the alloy films which consisted of approximately 50% cobalt showed a strong anisotropy along the horizontal direction. Coercive forces ranged from about 500 to about 1100 oe and the density of residual magnetization rose above 1000 gauss. The films may have applications in magnetic memories and recording devices.

184 citations


Journal ArticleDOI
TL;DR: In this article, the colouring of porous anodic films formed on aluminium in oxalic acid, using a c deposition of silver within the pores, has been studied by electron microscopical examination of replicas taken from fracture sections of the films.
Abstract: SummaryThe colouring of porous anodic films formed on aluminium in oxalic acid, using a c deposition of silver within the pores, has been studied by electron microscopical examination of replicas taken from fracture sections of the films. Following a recovery period in which tiny incipient pores develop in and transform the initial barrier layer of the film, by thermally enhanced field assisted dissolution, metal deposits at the bases of most original pores but the nucleation and growth process occurs at different rates in different pores. It appears that the metal deposition takes place as a result of current passed through the remaining barrier layer during the cathodic half cycle, probably via flaws of various kinds, and the metal is apparently not in direct contact with the aluminium substrate. A progressively thickening anodic film, characteristic of a c anodizing in sulphuric acid, is formed beneath the original film barrier layer but its development is impeded by the metal deposition process.

25 citations


Patent
08 Sep 1975
TL;DR: In this article, the authors propose a method of forming a laminated structure in which an outer layer of hardenable material and a carrier layer are respectively bonded to opposite faces of a preformed substantially shape-retaining barrier layer.
Abstract: A method of forming a laminated structure in which an outer layer of hardenable material and a carrier layer are respectively bonded to opposite faces of a preformed substantially shape-retaining barrier layer. The face of the carrier layer to which one of the opposite faces of the barrier layer is bonded is formed with projecting and recess portions and the barrier layer is bonded thereto in such a manner so as to adhere substantially only to the projecting portions without filling the recess portions. For instance, when the carrier layer is formed from a sheet of woven or knitted textile material, the barrier layer will adhere only to portions of the yarns or threads at the one face of the sheet substantially without filling the interstices between the threads. Evidently, the hardenable material of the outer layer will also not penetrate into the interstices, due to the interposition of the barrier layer between the outer and the carrier layer, even if the material of the outer layer is applied in flowable condition or in liquid form to the preformed barrier layer so that the laminated structure produced will be very pliable.

19 citations


Patent
11 Jun 1975
TL;DR: In this article, a method of forming a metal oxide barrier layer at the interface between a refractory oxide-silica investment mold and a contained metal superalloy was proposed.
Abstract: A method of forming a metal oxide barrier layer at the interface between a refractory oxide-silica investment mold and a contained metal superalloy includes the firing of the mold or the mold-metal system, in a controlled prevailing atmosphere having a predetermined amount of oxygen therein. The barrier layer enables directional solidification of the contained superalloy at elevated temperatures to occur without metal-mold reaction.

18 citations


Patent
13 Aug 1975
TL;DR: In this paper, a semiconductor device with a first semiconductor layer of one conductivity type and low impurity concentration, a second semiconductor region of the opposite conductivities type forming a PN junction with the first semiconducting layer, and a conductive layer extending on the passivating layer covering at least the inner periphery of the third region was described.
Abstract: A semiconductor device is disclosed which has a first semiconductor layer of one conductivity type and low impurity concentration, a second semiconductor region of the opposite conductivity type forming a PN junction with the first semiconductor layer, a third semiconductor region of the first mentioned conductivity type formed in the first semiconductor layer which surrounds the PN junction and forms an LH junction with the first semiconductor layer, a passivating layer covering at least the PN and LH junctions, and a conductive layer extending on the passivating layer covering at least the inner periphery of the third region and connected to the first semiconductor layer through an electric barrier layer.

13 citations


Patent
Nicholas L Petruzzella1
24 Apr 1975
TL;DR: In this paper, an electrophotographic imaging member comprising a conductive substrate having coated thereover an interfacial barrier layer comprising phthalocyanine in an electrically insulating binder resin which layer is overcoated with a photoconductive layer comprising selenium.
Abstract: There is disclosed an electrophotographic imaging member comprising a conductive substrate having coated thereover an interfacial barrier layer comprising phthalocyanine in an electrically insulating binder resin which layer is overcoated with a photoconductive layer comprising selenium. The member has substantially panchromatic response. The interfacial barrier layer comprising phthalocyanine in a binder acts as a surprisingly effective barrier layer against the injection of electrons from metallic bases.

9 citations


Patent
Robert A. Gange1
08 Oct 1975
TL;DR: In this article, a holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance.
Abstract: A holographic recording medium comprising a conductive substrate, a photoconductive layer and an electrically alterable layer of a linear, low molecular weight hydrocarbon polymer has improved fatigue resistance. An acrylic barrier layer can be interposed between the photoconductive and electrically alterable layers.

9 citations


Patent
10 Jan 1975
TL;DR: In this paper, the thickness of the electrical barrier layer is measured as a function of the highest applied voltage that does not produce a pronounced increase in current flow in the system, which is the anode.
Abstract: An electrode structure comprising a tube of substantially electrically insulating material such as glass, having a rounded tip of substantially electrically insulating material such as rubber, which tip has a capillary opening therethrough, encloses a metallic cathode and liquid electrolyte, and that electrode structure is placed with the tip and capillary opening in contact with the surface of a sample conductive substrate having an electrical barrier layer thereon whose thickness is to be measured, and electrical potential is applied between the cathode and sample conductive substrate, which is the anode in the system, and the thickness of the electrical barrier layer is measured as a function of the highest applied voltage that does not produce a pronounced increase in current flow in the system.

8 citations


Patent
Lee Lieng Huang1
24 Jun 1975
TL;DR: A xerographic member which comprises a conductive substrate having thereon an interfacial barrier layer in a thickness of about 0.5 to 3.0 microns is described in this paper, where a polymer blend or mixture of a polycarbonate, a polyether-ester-urethane, and a chlorosulfonated polyethylene is overcoated with a photoconductive layer about 10 to 200 microns in thickness.
Abstract: A xerographic member which comprises a conductive substrate having thereon an interfacial barrier layer in a thickness of about 0.5 to 3.0 microns. The barrier layer comprises a polymer blend or mixture of a polycarbonate, a polyether-ester-urethane, and a chlorosulfonated polyethylene and is overcoated with a photoconductive layer about 10 to 200 microns in thickness.

5 citations


Patent
11 Sep 1975
TL;DR: In this article, a prefabricated building slag, comprising a reinforced concrete layer and a barrier layer bonded to it, is characterized in that the heat and noise-insulating barrier layer has longitudinally and transversely extending, interconnected, depressions which are filled with concrete covering the entire barrier layer.
Abstract: A prefabricated building slag, comprising a reinforced concrete layer and a barrier layer bonded to it, is characterised in that the heat-and noise-insulating barrier layer has longitudinally and transversely extending, interconnected, depressions which are filled with concrete covering the entire barrier layer. Prod. combines improved stability with reduced weight and good heat- and noise-insulating characteristics. Installation of fittings, etc. after erection is possible. At that side of the barrier layer provided with the depressions, there may be a plaster-type layer whose outer surface may ge bonded to wallpaper-like carboard. The plaster-type layer may be adapted to receive fittings. The barrier layer may be of synth. plastics foam, e.g. polystyrene, polyurethane. There may be a vapour-impermeable layer between the plaster-type layer and the carboard stratum.

Patent
18 Jul 1975
TL;DR: In this article, the authors proposed a roof consisting of a supporting cover, pref. steel-reinforced concrete, a roof skin, a heat barrier, and a gravel coating.
Abstract: The roof, consists of a supporting cover, pref. steel-reinforced concrete, a roof skin, a heat barrier and a gravel coating. A first barrier layer is provided between the steel-reinforced roof and the roof skin and a further barrier layer between this roof skin and the gravel coating. The barrier layers consist of foam plastic, esp. extruded polystyrene foam. A heat insulated can be produced in simple manner; a roof of much lighter construction can be achieved, so that the foundations can also be of reduced size.

Patent
15 May 1975
TL;DR: In this paper, the authors describe the electrical line on semiconductive substrate has two or more separate metallic conductor strips and is characterised by that at least one of the metal strips forms with the semiconductor substrate to a metal semiconductor barrier contact.
Abstract: The electrical line on semiconductive substrate has two or more separate metallic conductor strips and is characterised by that at least one of the metal strips forms with the semiconductive substrate to a metal semiconductor barrier contact. One conductor strip adjacent to the metal strip has with the semiconductive substrate an ohmic resistance. The semiconductive substrate may consits of a doped monocrystal part with high mobility carriers, of a doped gallium arsenide monocrystal part or of n-doped Si-monocrystal with a conductivity between 10-1 and 103 (ohm cm)-1. The semiconductive substrate may also be epitactic semi-conductor material. The semiconductor surface has an insulating passivation layer which during the manufacturing process of the line is etched away where the conductor strip is placed. the distance between a conductor strip forming a barrier contact and a conductor strip with an ohmic contact is a multiple of the width of the barrier layer free from movable charge bearing carriers directly underneath the conductor strip. the width of the barrier layer below the strip is influenced by an applied d-c bia s between conductors. The arrangement permits due to the voltage dependent capacity layer to vary by d-c biassing the characteristic impedance, attenuation, phase of the line.

Patent
20 Feb 1975
TL;DR: In this paper, the varactor diode has two stacked material layers which on a common boundary surface form a barrier layer, and the two layers may be reversed and the semi-insulating semiconductor may be also combined with a normal semiconductor at opposite conductivity.
Abstract: The varactor diode has two stacked material layers which on a common boundary surface form a barrier layer. One material is formed by a magnetic semiconductor of one conductivity, while the second material is formed by a magnetic semiconductor of opposite conductivity. The second material layer may be a normal semiconductor of opposite conductivity. The second material layer may be a normal semiconductor of opposite conductivity. If the second material is a metal, the first layer is formed by a doped, magnetic, semi-insulating semiconductor. The two layers may be reversed and the semi-insulating semiconductor may be also combined with a normal semiconductor at opposite conductivity.