Showing papers on "Gallium nitride published in 1981"
TL;DR: In this article, a single crystal GaN film was obtained by RMBE method using the reaction of Ga with NH3 and the addition of ionized N2 with decreasing NH3 improved the electrical properties of GaN.
Abstract: High-quality single crystal GaN films have been obtained by RMBE method using the reaction of Ga with NH3. Then, the addition of ionized N2 with decreasing NH3 improved the electrical properties of GaN. Residual H2 decomposed from NH3 has been disturbing the GaN growth and promoting generation of nitrogen vacancies and the complexes.
55 citations
TL;DR: In this paper, the authors compared several plasma assisted methods used to deposit gallium nitride films at low substrate temperatures (below 450°C), with particular attention being paid to oxygen incorporation.
15 citations
14 citations
Patent•
10 Dec 1981
TL;DR: In this paper, an epitaxially grown uniform layer on the whole surface of a substrate was formed from a mixed melt of bismuth and gallium by reacting gallium with ammonia on the free interface of the melt.
Abstract: PURPOSE:To form an epitaxially grown uniform layer on the whole surface of a substrate pulled up from a mixed melt of bismuth and gallium by reacting gallium with ammonia on the free interface of the melt. CONSTITUTION:The interior of a reaction tube 23 is filled with an atmosphere of an inert gas such as N2, and a quartz crucible 22 holding a mixed melt 21 of bismuth and gallium is set in the tube 23. A substrate 25 is then immersed in the melt 21, and after heating the whole tube 23 to a high temp., ammonia is added to the atmospheric gas. This state is kept for about 10min, and the substrate is pulled up at about 0.5mm./min rate to obtain a gallium nitride crystal having about 10mum thickness on the substrate surface.
11 citations
Patent•
23 May 1981
TL;DR: In this article, an uneven part 91 such as cut groove or the like is formed in a stripe shape on a part of the surface of a monocrystalline substrate 1 such as a sapphire, and a region 92 exhibiting strong N type conductivity is formed on a semi-insulating gallium nitride layer 31 of the part corresponding to the uneven region 91, and is connected at one side to an N type gallium oxide layer 21 and is exposed at the other side to the surface.
Abstract: PURPOSE:To eliminate a connecting wire to a stem by forming uneven region on a part of a monocrystalline substrate surface, a penetrating the high conductivity region corresponding to the uneven region to the surface and providing electrodes on semi-indulating layer and the high conductivity region on the surface of the substrate. CONSTITUTION:An uneven part 91 such as cut groove or the like is formed in a stripe shape on a part of the surface of a monocrystalline substrate 1 such as a sapphire or the like. A region 92 exhibiting strong N type conductivity is formed on a semi-insulating gallium nitride layer 31 of the part corresponding to the uneven region 91, and is connected at one side to an N type gallium nitride layer 21 and is exposed at the other side to the surface. Metallic electrodes 51, 41 are formed respectively on the layers 31 and the high conductivity region 92. This light emitting diode chip is completed by connecting metallic electrodes 51, 41 to the stem electrodes 61, 71 respectively. Thus, it can eliminate a wire between the stem and the electrode of the diode, and the reliability and mass productivity of the light emitting element can be improved.
6 citations
Patent•
23 May 1981
TL;DR: In this article, the vapor phase growth of GaN on an insulating substrate of alpha-Al2O3 or the like is carried out while adding at least one of impurity atoms such as Zn, Cd, As, P, S, Se and Te to the atmosphere at the time of starting the growth.
Abstract: PURPOSE:To obtain a GaN thin film with high crystallizability suitable for use as a substrate by carrying out the vapor phase growth of GaN on an insulating substrate while adding an impurity atom such as Zn or Cd to the atmosphere at the time of starting the growth and peeling the resulting GaN from the substrate CONSTITUTION:In the vapor phase growth of GaN on an insulating substrate of alpha-Al2O3 or the like the growth is carried out while adding at least one of impurity atoms such as Zn, Cd, As, P, S, Se and Te to the atmosphere at the time of starting the growth to weaken the bonding of GaN to the substrate Epitaxially grown GaN is then peeled from the substrate to obtain a GaN thin film having a smooth surface and high crystallizability This thin film is suitable for use as the 2nd substrate in a process of further epitaxially growing GaN
3 citations
Patent•
09 Dec 1981
TL;DR: In this article, a gallium nitride epitaxial crystal having the substrate surface inclined by 0.5-4 degrees with respect to a sapphire (0001) face or a spinel (111) face is used as the substrate 11.
Abstract: PURPOSE:To reduce a leakage current by a method wherein a specified surface as a substrate is employed. CONSTITUTION:A gallium nitride epitaxial crystal having the substrate surface inclined by 0.5-4 deg. with respect to a sapphire (0001) face or a spinel (111) face is used as the substrate 11. An N type gallium nitride layer 21 and a high resistance gallium nitride layer 31 are formed on the substrate 11. An N type region is exposed in part below an N side electrode 51. The shape of a chip is made rectangular in order to form both of an I side electrode 41 and the N side electrode 51 on the surface of the chip. The substrate 11 is processed is such a manner that the light emission element chip is made parallel to the substrate surface and makes the angle by 40-90 deg. along the longer side with respect to the direction in which a perpendicular line on a crystal face of the substrate 11 is seen from a perpendicular line on the substrate surface.
1 citations