Showing papers on "Ground bounce published in 1979"

Electrically programmable control gate injected floating gate solid state memory transistor and method of making same

Abstract: A non-volatile memory structure of the floating gate type is described wherein current carriers are injected onto the floating gate from the control gate as distinguished from the prior art which injects current carriers into the floating gate from the substrate. This invention teaches that by tailoring the capacitance between the control gate and the floating gate and the capacitance between the floating gate and the substrate different field intensities are created in the region between the floating gate and the control gate and in the region between the substrate and the floating gate. When the field intensity across the capacitor formed between the control gate and the floating gate is greater than the field intensity across the capacitor formed between the floating gate and the substrate, current carriers will be injected onto the floating gate from the control gate.

Synthesis of Gate-Minimum Multi-Output Two-Level Negative Gate Networks

Abstract: A negative gate is a gate which can realize an arbitrary negative function. The problem of synthesizing logical networks, with negative gates only, is important for the design of MOS LSI.

Memory integrated circuit

Abstract: A memory circuit suitable for large scale integration is disclosed. The memory circuit comprises a plurality of memory cells each including a gate transistor having a gate coupled to one of word lines and a drain coupled to one of digit lines and capacitor means coupled between a source of the gate transistor and a potential source, wherein the threshold voltage of the gate transistors is made smaller than that of logic transistors employed in peripheral circuits.