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Showing papers on "Ground bounce published in 1982"


Patent
16 Sep 1982
TL;DR: In this article, a series transistor is added to prevent excess voltage on the gate oxide of a transistor connected to a booted node, so neither transistor will have the full booted voltage across its gate oxide.
Abstract: In a clock generator circuit for a dynamic RAM or the like it is necessary to boot certain nodes to a value to above the supply voltage in order to provide a high-level gate voltage for output transistors. To prevent excess voltage on the gate oxide of a transistor connected to a booted node, a series transistor is added which has the supply voltage on its gate, so neither transistor will have the full booted voltage across its gate oxide.

22 citations


Patent
15 Mar 1982
TL;DR: In this paper, a three-gate charge-coupled device (CCD) is designed to operate at cryogenic temperatures (circa 1-20° K), where the active detection area is underneath a transparent detector gate which functions as the device's input gate.
Abstract: A preferred embodiment of the invention is a three-gate charge-coupled device (CCD) which is designed to operate at cryogenic temperatures (circa 1-20° K). For an N channel device, a low-concentration N type material is separated from a P type substrate by a thin layer of intrinsic material. The active detection area is underneath a transparent detector gate which functions as the device's input gate. Electrons excited into the conduction band under the detector gate flow into the conduction band under the adjoining second gate which functions as an integrating gate by collecting the electrons that flow from under the input gate. The third gate also adjoins the second gate and is called the readout gate. When the readout gate is at a low potential, it dams up the electrons in the conduction band under the integrate gate. When the readout gate is at a potential at least as high as that of the integrate gate, the electrons may flow into a drain which adjoins the readout gate provided that the drain is at a potential higher than that of the readout gate; otherwise, electrons may flow from the drain into the conduction band underneath all three gates if the drain has the lowest potential of the four. Such a device may be constructed as a monolithic two-dimensional array with the drains extending in the Y-direction and the gates extending in the X-direction. Electrons lost by absorption of photons may thus be replaced.

9 citations