Showing papers on "IMPATT diode published in 2003"
TL;DR: In this paper, the authors demonstrate that a heterostructure IMPATT diode has the potential for almost noise-free operation, based on a Monte Carlo simulation of oscillating IMPATT devices.
Abstract: Impact avalanche transit time (IMPATT) diodes are an important source of radio-frequency power at millimeter and submillimeter wavelengths. However, exploitation of these devices has been restricted, as they are commonly believed to suffer from high noise levels. In this article, we demonstrate that a heterostructure IMPATT diode has the potential for almost noise-free operation. Our analysis is based on a Monte Carlo simulation of oscillating IMPATT devices.
4 citations
4 citations
10 Nov 2003
TL;DR: In this article, S-parameter measurements were performed to characterize IMPATT diodes integrated in coplanar waveguides, up to a maximum frequency of 40GHz.
Abstract: S-parameter measurements were performed to characterize IMPATT diodes integrated in coplanar waveguides, up to a maximum frequency of 40GHz. With a de-embedding procedure the real- and imaginary part of the impedance of the inner diodes were calculated. Above the avalanche frequency the diodes showed the expected negative real- and imaginary parts of the impedance. Due to theory, with increasing current density the avalanche frequency shifted to higher values. To manufacture the diodes and oscillators a complete monolithically integrated process was used. This process avoids the use, of heatsinks and the difficult and time consuming bonding process.
2 citations
01 Dec 2003
1 citations
01 Jan 2003
TL;DR: In this article, a comparative study of small signal and noise behavior of n + pνnp + (ν-type) and n+ pπnp+ (π-type), based on InP material has been made by computer simulation method developed by the authors.
Abstract: A comparative study of small signal and noise behaviour of n + pνnp + (ν-type) and n + pπnp + (π-type) structures of DAR IMPATT diode based on InP material has been made by computer simulation method developed by our group.Both the structures are taken of a fixed width of 800 nm. Multiple peaks for negative conductance and mean square noise voltage are obtained for both type of structures. It is observed that the device negative conductance (-G P ) as well as the device negative resistance (-Z R P ) for the π-type InP DAR IMPATT diode is much higher than those of the ν-type InP DAR IMPATT diode, both for operation in W-band and D-band. Similarly, the mean square noise voltage peaks for the π-type InP DAR IMPATT diode are observed to be higher than the corresponding peaks of the ν-type InP DAR IMPATT diode. This is obvious because of the fact that the high power generating mechanism also creates a higher noise. However, the π-type InP DAR IMPATT diode can be used for high power performance with a moderate noise by suitably choosing the frequency of operation.
1 citations