Showing papers on "Mask inspection published in 1988"
TL;DR: In this paper, an electron-beam inspection system with a capability of detecting quarter-micron defects has been developed and is applied to the inspection of the x-ray mask itself.
Abstract: An electron‐beam inspection system with a capability of detecting quarter‐micron defects has been developed and is applied to the inspection of the x‐ray mask itself. The accuracy of this system is measured and discussed. The distortion of the electron‐beam deflection is 0.08 μm (root‐mean‐square error) within 70×90 μm area in the scan field of 100 μm2. A sample x‐ray mask has Au absorption patterns with the thickness of 0.8 μm on a 2.0‐μm‐thick SiN membrane. An accelerating voltage of 3 kV was found to give a stable signal with a minimum of charging effects. The inspection is performed by means of die‐to‐die comparison scheme. Detection of 0.3 μm defects was demonstrated, indicating the potential of electron‐beam technology for x‐ray mask inspection.
3 citations
Patent•
12 Jul 1988
TL;DR: The apparatus for inspection of a mask for X-ray lithography or corpuscular, in particular ionic, ray lithography, where the mask has structures in the shape of areas impermeable to X-rays was described in this article, where a receiving stage 4, which is preferably designed as coordinate stage and/or is optionally rotatable and is provided with a perforation, for the mask 2 to be inspected is arranged in the ray path of a projection device for an inspection ray.
Abstract: The apparatus for inspection of a mask for X-ray lithography or corpuscular, in particular ionic, ray lithography, where the mask has structures in the shape of areas impermeable to X-rays for X-ray lithography, and the mask has structures in the shape of perforations for corpuscular, in particular ionic, ray lithography, where a receiving stage 4, which is preferably designed as coordinate stage and/or is optionally rotatable and is provided with a perforation, for the mask 2 to be inspected is arranged in the ray path of a projection device for an inspection ray, in particular a corpuscular ray, for example a fine-focused electronic or ionic ray, and where an emitter surface 5 for secondary quanta or secondary radiation 6, resulting from the inspection rays passing through the areas permeable to X-rays or the openings 1 in the mask 2 lying on the receiving stage 4, and a detector 7 for the secondary quanta coming from the emitter surface 5 or the secondary radiation 6 coming from the emitter surface are arranged underneath the stage perforation 3, and where the signals of the detector 7 can be passed, where appropriate after modification, to an image store, is described. … …
1 citations