Showing papers on "Moore's law published in 1997"
TL;DR: Moore's Law has become the central driving force of one of the most dynamic of the world's industries as discussed by the authors, and it is viewed as a reliable method of calculating future trends as well, setting the pace of innovation, and defining the rules and the very nature of competition.
Abstract: A simple observation, made over 30 years ago, on the growth in the number of devices per silicon die has become the central driving force of one of the most dynamic of the world's industries. Because of the accuracy with which Moore's Law has predicted past growth in IC complexity, it is viewed as a reliable method of calculating future trends as well, setting the pace of innovation, and defining the rules and the very nature of competition. And since the semiconductor portion of electronic consumer products keeps growing by leaps and bounds, the Law has aroused in users and consumers an expectation of a continuous stream of faster, better, and cheaper high-technology products. Even the policy implications of Moore's Law are significant: it is used as the baseline assumption in the industry's strategic road map for the next decade and a half.
1,649 citations
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TL;DR: The Research News article “Can chip devices keep shrinking?” by Robert F. Service represents Moore's Law as a doubling in the number of transistors on computer chips every 18 months.
Abstract: The Research News article “Can chip devices keep shrinking?” by Robert F. Service ([13 Dec., p. 1834][1]) represents Moore's Law as a doubling in the number of transistors on computer chips every 18 months. In the graphic by VLSI Research Inc., with a caption heralding the validity of Moore's
194 citations
15 Sep 1997
TL;DR: The status, potential and hurdles of the distinctive silicon CMOS technologies are discussed, including Thin Film Silicon on insulator, Complementary Gallium Arsenide, and Graded-Channel CMOS (GCMOS).
Abstract: Silicon CMOS technology has followed Moore's law over the past two decodes. It is still on the predicted curve, and it appears that the trend will continue into the next decade. The SIA roadmap published by Sematech in 1994 predicted the progress of semiconductor technology fairly well. Expectations based on the SIA roadmap are now being exceeded; for example, as announced by many companies, the projected 0.25 /spl mu/m production in 1998 will be met in 1997. Other technologies continue to make progress, along with silicon CMOS technology. The distinctive ones are Thin Film Silicon on insulator (TFSOI), Complementary Gallium Arsenide (CGaAs), and Graded-Channel CMOS (GCMOS). This paper will discuss the status, potential and hurdles of these technologies.
1 citations
01 Sep 1997
TL;DR: In this article, the authors pointed out that the semiconductor industry is following a linear scaling law that is expected to be fairly rigorous, at least into the first decade of the next century.
Abstract: The technological means now exists for approaching the fundamental limiting scales of solid-state electronics in which a single electron can, in principle, represent a single bit in an information flow through a device or circuit. The burgeoning field of single-electron tunneling (SET) effects, although currently operating at very low temperatures, has brought this consideration into the forefront. Indeed, the recent observations of SET effects in poly-Si structures at room temperature by Yano et al . [1] has grabbed the attention of the semiconductor industry. While there remains considerable debate over whether the latter observations are really single-electron effects, the resulting behavior has important implications to future semiconductor electronics, regardless of the final interpretation of the physics involved. We pointed out in Chapter 1 that the semiconductor industry is following a linear scaling law that is expected to be fairly rigorous, at least into the first decade of the next century. This relationship will lead to devices with critical dimensions well below 0.1 μm. Research devices have been made with drawn gate lengths down to 20 nm in GaAs and 40 nm in Si MOSFETs. This suggests that such devices can be expected to appear in integrated circuits within a few decades (by 2020 if scaling rules at that time are to be believed). However, it is clear from a variety of considerations that the devices themselves may well not be the limitation on continued growth in device density within the integrated circuit chip.