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Moore's law: past, present and future
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TLDR
Moore's Law has become the central driving force of one of the most dynamic of the world's industries as discussed by the authors, and it is viewed as a reliable method of calculating future trends as well, setting the pace of innovation, and defining the rules and the very nature of competition.Abstract:
A simple observation, made over 30 years ago, on the growth in the number of devices per silicon die has become the central driving force of one of the most dynamic of the world's industries. Because of the accuracy with which Moore's Law has predicted past growth in IC complexity, it is viewed as a reliable method of calculating future trends as well, setting the pace of innovation, and defining the rules and the very nature of competition. And since the semiconductor portion of electronic consumer products keeps growing by leaps and bounds, the Law has aroused in users and consumers an expectation of a continuous stream of faster, better, and cheaper high-technology products. Even the policy implications of Moore's Law are significant: it is used as the baseline assumption in the industry's strategic road map for the next decade and a half.read more
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30 Years of Lithium-Ion Batteries.
TL;DR: The main roles of material science in the development of LIBs are discussed, with a statement of caution for the current modern battery research along with a brief discussion on beyond lithium-ion battery chemistries.
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Alternative Plasmonic Materials: Beyond Gold and Silver
TL;DR: This review explores different material classes for plasmonic and metamaterial applications, such as conventional semiconductors, transparent conducting oxides, perovskiteOxides, metal nitrides, silicides, germanides, and 2D materials such as graphene.
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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing
TL;DR: The negative bias temperature instability (NBTI) commonly observed in p-channel metaloxide-semiconductor field effect transistors when stressed with negative gate voltages at elevated temperatures is discussed in this article.
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Room Temperature Magnetic Quantum Cellular Automata
TL;DR: Network of interacting submicrometer magnetic dots are used to perform logic operations and propagate information at room temperature, which offers a several thousandfold increase in integration density and a hundredfold reduction in power dissipation over current microelectronic technology.
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Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
TL;DR: In this paper, the authors summarized recent progress and current scientific understanding of ultrathin (<4 nm) SiO2 and Si-O-N (silicon oxynitride) gate dielectrics on Si-based devices.
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Cramming More Components Onto Integrated Circuits
TL;DR: Integrated circuits will lead to such wonders as home computers or at least terminals connected to a central computer, automatic controls for automobiles, and personal portable communications equipment as mentioned in this paper. But the biggest potential lies in the production of large systems.