Showing papers on "Mott transition published in 1983"
TL;DR: In this article, a self-consistent ladder Hartree-Fock approximation is derived in order to achieve a simultaneous treatment of free nucleons, douterons and higher clusters.
79 citations
TL;DR: In this article, it was shown that the statistical behavior of a spin aligned exciton gas up to high densities corresponding to rs≈2 at T ≥ 2K in strongly uniaxially compressed Ge in magnetic field is investigated.
Abstract: It is shown that the unique opportunity for investigation of the statistical behaviour of a spin aligned exciton gas up to high densities corresponding to rs≈2 at T≈2K in strongly uniaxially compressed Ge in magnetic field is arised. The experimentally observed changes in the exciton-phonon emission spectra of a dense exciton gas are interpreted in terms of the weakly nonideal Bose-gas. The ionization collapse (Mott transition) of excitons giving rise to an abrupt change in electron transport phenomena has been observed at density corresponding to rs=2.
16 citations
TL;DR: In this article, the authors derived the red bronze structure from the one of the blue bronze and explained the metal semiconductor transition between K0.3MoO3 and K 0.33MoOO3 with a formal Mott transition.
16 citations
TL;DR: In this article, the motion of interacting electrons in an array of charged impurities in two dimensions is discussed within a generalized selfconsistent current relaxation theory, where the ratio of impurity density ni to electron density nc is shown to depend on nc and varies between 0.2 and 10.
15 citations
TL;DR: In this article, the electronic structures of organic ion-radical salts, molecular conductors, and charge-transfer complexes are described by solid-state models with one valence state per site.
Abstract: The electronic structures of organic ion-radical salts, molecular conductors, and charge-transfer complexes are described by solid-state models with one valence state per site. Similar models occur in π-electron theories of conjugated molecules or in spin Hamiltonians for magnetic insulators. A localized or valence bond (VB) representation is qualitatively adequate in narrow band systems. Diagrammatic VB methods in finite models yield convenient exact solutions to the resulting configuration interaction (CI) problem as correlated states based on linear combinations of VB diagrams. Also found are exact charges, bond orders, ionicity, correlation functions, transition moments or other properties of correlated electronic states. Particular attention is given to qualitative failures of conventional one-electron descriptions, which often reflect degeneracies lifted by correlations. Correlated states give the correct ordering of the 21Ag and 11Bu states of trans-trans octatetraene, clarify the midgap absorption in polyacetylene, rationalize the partial ionicity and electrostatic energy of ion-radical organic complexes, demonstrate an exactly soluble magnetic analog to the Mott transition, and quantitatively fit the thermodynamics of several random-exchange Heisenberg antiferromagnets. Correlated states remain central in simultaneously modeling optical, magnetic, and electrical excitations in π-radical solids.
14 citations
TL;DR: In this paper, an experimental study of a magnetic-field-induced metal-insulator Mott transition in n -Cd χ Hg 1−χ Te is described.
4 citations
TL;DR: In this paper, the binding energy of a D − ion in the presence of other free carriers is calculated in polar crystals, where it is assumed that the effective interaction between each of the two electrons and the positive ion is described by Thomas-Fermi potential.
TL;DR: In this paper, the authors extended the Hubbard model to include the effect of random atomic potentials and transfer integrals of electron and showed that the band gap due to the correlation effect in an insular phase vanishes in the presence of a certain value of the randomness.
Abstract: The Hubbard model is extended to include the effect of random atomic potentials and transfer integrals of electron. The density of states of quasi-particles is calculated with the use of Hubbard's third approximation for the electron correlation problem and the coherent potential approximation for the random problem (Shiba's method). The results suggest that the band gap due to the correlation effect in an insular phase vanishes in the presence of a certain value of the randomness. However, this does not necessarily imply an insulator-to-metal transition which would be determined by the relative position of the mobility edge and the Fermi level.