Showing papers on "NQS published in 1984"

Buried-channel MOS transistor with punch-through

Abstract: The punch-through phenomenon is normally considered as a parasitic mechanism in MOS devices, which is critical for short channel MOS transistors. An MOS transistor operation in the presence of punch-through is studied in this paper. A proper device geometry and additional substrate biasing enable useful voltage gain of the transistor, even if the punch-through is the dominant mechanism. Principle of operation and experimental data of the MOS controlled punch-through transistor is presented.

Method for operating a circuit arrangement with two MOS field-effect transistors series-connected to a voltage source, and monitoring circuit for carrying out the method

Abstract: In the method according to the invention, the voltage present at the drain-source path of each MOS field-effect transistor (1-4) is monitored by means of a monitoring circuit. Each MOS field-effect transistor receives a drive pulse when the voltage present across it is reversely directed. A reverse current which would otherwise flow through the diode (1a-4a) integrated in each MOS field-effect transistor is thus conducted via the drain-source path of the MOS field-effect transistor. This prevents a storage charge from being built up in the diode which would lead to high reverse currents on reversal of the voltage present across the MOS field-effect transistor.