Showing papers on "Photonic crystal published in 1974"
01 Apr 1974
TL;DR: In this article, a wide variety of deep-level recombination centers have been observed at large concentrations in commercially available red GaAsP light-emitting diode p-n junctions.
Abstract: A wide variety of deep-level recombination centers have been observed at large concentrations in commercially available red GaAsP light-emitting diode p-n junctions. Similar defects have not been observed in GaP diodes. The characteristics, probable cause, and possible effect on luminescence efficiency of these deep-level defect centers are described.
7 citations