Showing papers on "Power MOSFET published in 1972"
Patent•
IBM1
TL;DR: In this article, an FET (field effect transistor) driver circuit capable of driving large capacitive loads, while dissipating relatively little power is described, where a delay circuit forms a parallel path between the circuit input and output providing a delayed signal at the output of the circuit after the gate to source feedback capacitor of the output FET has been charged.
Abstract: Disclosed is an FET (field effect transistor) driver circuit capable of driving large capacitive loads, while dissipating relatively little power. A delay circuit forms a parallel path between the circuit input and output providing a delayed signal at the output of the circuit after the gate to source feedback capacitor of the output FET has been charged. The particular delay circuit disclosed herein accurately tracks the driver circuit providing a precise time delay for limiting transient power dissipation in high frequency operation.
23 citations
01 Jan 1972
TL;DR: In this paper, improved sensitivity of N-channel MOSFETs is discussed, citing new matched filter implementation techniques, and successful integration of MOS-LSI and acoustic surface-wave technologies is expected to have a large impact on signal processing in the VHF-UHF frequency range.
Abstract: Improved sensitivity of N-channel MOSFETs will be discussed, citing new matched filter implementation techniques. Successful integration of MOS-LSI and acoustic surface-wave technologies is expected to have a large impact on signal processing in the VHF-UHF frequency range.
3 citations
IBM1
TL;DR: In this paper, the Schottky-Barrier diodes (SBD) are integrated with an n-channel MOSFET and the n+pockets are outdiffused through a p-type epitaxial layer and put in contact with the proper metal.
Abstract: Joint integration of n-channel MOSFETs and Schottky-Barrier diodes (SBD) requires only modest changes in the overall FET process but offers considerable improvements over all-FET circuits in power consumption, density and performance. To implement SBD's n+pockets are outdiffused through a p-type epitaxial layer and put in contact with the proper metal. MOS guard rings are utilized to relieve electrical field enhancement around the perimeter of the device.
2 citations