Showing papers on "Silicon on insulator published in 1969"

The silicon-silicon dioxide system

Abstract: Study of the silicon-silicon dioxide system as a junction between a nearly ideal semiconductor and insulator has aroused both scientific and technological interest. Surface phenomena associated with this system are influenced by contamination and imperfections in the oxide, impurity redistribution in the silicon near the oxide, and finally by additional electronic energy states at the oxide-silicon interface. Over the past few years, the MOS (metal-oxide-semiconductor) approach has been highly developed and is the principal tool for the investigation of silicon surface phenomena. The theory of the ideal MOS capacitor is reviewed followed by a study of its use in the analysis of surface effects. Finally, the three-way relationship of the effect of oxide formation conditions and heat treatment on the properties of the oxidized silicon surface, and the subsequent influence of the properties of this surface on semiconductor device parameters is reviewed.

Optimization of MNOS device performance

Abstract: The MNOS (metal-nitride-oxide-semiconductor) memory transistor is similar in geometry and fabrication technique to standard MOS (metal-oxide-semiconductor) devices, except for the gate insulator, which is a two layer structure of silicon dioxide nearest the silicon and silicon nitride on top of the silicon dioxide. Donor-type defect states, or traps, exist at or near the interface between these two insulators, and the states may be charged and discharged by the application of electric fields to the insulators. The amount of charge in the traps influences the surface potential of the silicon, and can therefore be used to alter the threshold voltage of a transistor fabricated with this double insulator structure.