Showing papers on "Sputter deposition published in 1970"

Rf sputtering apparatus

Abstract: An r. f. sputter coating apparatus includes an electrically isolated sputter shield surrounding the glow discharge region between anode and cathode. An r. f. signal may be applied to the shield to drive the glow discharge more positive with respect to anode potential. In addition, when sputtering conductive materials, a d. c. potential may be applied to the shield. When applying r. f. to the shield a variable inductance may be placed in parallel with the shield so as to form a parallel resonant circuit and maintain potential between shield and ground a maximum. A matching network is provided to assure maximum power transfer from the r.f. generator into the discharge. The network may include a vacuum capacitor formed within the dark space of the cathode on the cathode back side. Automatic electronic tuning of the matching network can be provided. A reactance tube variable network connected between the r. f. output and the matching network compensates for load circuit changes during sputtering. The shield may also be used to advantage in sputter etching equipment.

Deposition of polymeric coatings utilizing electrical excitation

Abstract: An electric deposition process providing a glow discharge by virtue of electrical energy fields provided internal to a deposition chamber enables with one step to provide a protective coating of a surface of a substrate material by repolymerizing a polymer solid starting material. A carrier gas such as argon, xenon or krypton is used in the deposition chamber for the energy field to act upon it, provide the glow and cause the glowing gas to volatilize particles of the starting material and be deposited as the protective coating on the substrate.

High-Rate rf Sputtering System

Abstract: A sputtering target system utilizing high vacuum as the electrical insulator is described. This technique permits the application of high rf power to the target. Power up to 5000 W has been applied to a 7.3-cm-diam electrode bonded to a 10-cm-diam Al2O3 target. Under the proper conditions of geometry, gas pressure, and magnetic field, this has resulted in deposition rates of Al2O3 in excess of 6300 A/min. For an SiO2 target with 3000-W input, deposition rates in excess of 10 000 A/min have been obtained. Typical deposition rates of Al2O3, are given for this target system as a function of rf power, magnetic field, and gas pressure.

Gallium–Phosphide Films Deposited by Sputtering

Abstract: Gallium–phosphide films have been deposited by sputtering from a bulk p-type GaP target using radio frequency (rf), dc, and combined rf-dc glow discharges in argon at 30×10−3 Torr. Any one of these methods yielded p-type semiconductor films of GaP at rates of up to 1100 A/min. The films, deposited on glass substrates, were either amorphous or polycrystalline; at a given substrate temperature the deposition rate required for the polycrystalline film was higher than for the amorphous one. Deposition at increasingly high substrate temperatures or annealing after the deposition at ∼700 °C resulted in improvement of the optical properties, which is interpreted as being due to the removal of defects.