Showing papers on "Van der Pauw method published in 1968"
TL;DR: Hall measurements have been made on epitaxially grown, zinc-doped gallium phosphide, from which the gallium arsenide substrate had been removed The measurements were made in the temperature range from 300° to 4°K on samples whose room-temperature carrier concentration varied from 7×1015 to 7× 1018 cm−3 Using both van der Pauw and conventional Hall techniques on those samples which show a high degree of compensation, the variation of the ionization energy of zinc with concentration was determined Room-tem temperature hole mobility varied from 60 to 100 cm2·
Abstract: Hall measurements have been made on epitaxially grown, zinc‐doped gallium phosphide, from which the gallium arsenide substrate had been removed The measurements were made in the temperature range from 300° to 4°K on samples whose room‐temperature carrier concentration varied from 7×1015 to 7×1018 cm−3 Using both van der Pauw and conventional Hall techniques on those samples which show a high degree of compensation, the variation of the ionization energy of zinc with concentration was determined Room‐temperature hole mobility varied from 60 to 100 cm2· V−1· sec−1 These observed hole mobilities are in good agreement with the calculated values of mobility due to reduced scattering by acoustical and optical phonons, and are shown to be too small to be accounted for by the mechanism of impurity scattering below 100°K Resistivity measurements made in the temperature range 77°–42°K show that in the impurity band conduction range, gallium phosphide behaves in a manner similar to impure germanium
18 citations
TL;DR: In this paper, the electrical conductivity and Hall coefficient of high resistivity semiconductors can be measured using a single electrometer for current and voltage measurements using the L. J. van der Pauw technique with the electrometer switched to perform the necessary functions.
Abstract: A method is described whereby the electrical conductivity and Hall coefficient of high-resistivity semiconductors can be measured using a single electrometer for current and voltage measurements. Measurements are made following the L. J. van der Pauw technique with the electrometer switched to perform the necessary functions while maintaining the low side at ground potential. The variation of conductivity and Hall coefficient with temperature can be determined by a point by point method or the data can be recorded on an X-Y recorder. Conductivities as low as 10−10Ω−1·cm−1 have been measured.
7 citations
TL;DR: In this paper, large single crystals of cobalt monosilicide have been grown by the Czochralski technique over a pressure range of 10 -5 Torr to 300 psi.