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A.A.M. Farag
Researcher at Ain Shams University
Publications - 141
Citations - 3391
A.A.M. Farag is an academic researcher from Ain Shams University. The author has contributed to research in topics: Thin film & Band gap. The author has an hindex of 29, co-authored 131 publications receiving 2796 citations. Previous affiliations of A.A.M. Farag include Taif University & Al Jouf University.
Papers
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Structural, absorption and optical dispersion characteristics of rhodamine B thin films prepared by drop casting technique
A.A.M. Farag,I.S. Yahia +1 more
TL;DR: In this article, the structural and morphological properties of Rhodamine B (Rh.B) thin films were studied by X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively.
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Production of biodegradable plastic from agricultural wastes
TL;DR: In this paper, an efficient method for the production of the cellulose acetate biofiber from flax fibers and cotton linters was reported, and the structure of the produced bioplastic was confirmed by X-ray diffraction, FT-IR and gel permeation chromatography.
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Structural, optical and electrical properties of thermally evaporated Ag2S thin films
TL;DR: In this article, the optical properties of Ag2S are investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence in the wavelength range 500-2200nm.
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Photoluminescence and optical properties of nanostructure Ni doped ZnO thin films prepared by sol-gel spin coating technique
TL;DR: In this article, the spin coating sol-gel technique has been successfully used to deposit highly uniform and good adhesion of nano structure thin films of ZnO doped with different Ni concentrations.
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Photovoltaic properties of NiPc/p-Si (organic/inorganic) heterojunctions
TL;DR: In this article, the current in the forward direction was found to obey the diode equation and the conduction was controlled by thermionic emission mechanism for relatively higher voltages, conduction dominated by a space-charge-limited conduction mechanism with single trap level of 0.36 eV.