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A. Beguivin
Researcher at University of Cambridge
Publications - 9
Citations - 86
A. Beguivin is an academic researcher from University of Cambridge. The author has contributed to research in topics: Micromagnetics & Magnetization. The author has an hindex of 6, co-authored 9 publications receiving 78 citations.
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Journal ArticleDOI
Controlling nucleation in perpendicularly magnetized nanowires through in-plane shape
TL;DR: In this paper, the nucleation field of perpendicularly magnetized nanowires can be controlled by placing pads at the ends of the wires to prevent any reduction in coercivity with width.
Journal ArticleDOI
Simultaneous magnetoresistance and magneto-optical measurements of domain wall properties in nanodevices
A. Beguivin,Héctor Corte-León,Alessandra Manzin,Vahid Nabaei,Patryk Krzysteczko,Hans Werner Schumacher,D. Petit,R. P. Cowburn,Olga Kazakova +8 more
TL;DR: In this paper, simultaneous anisotropic magnetoresistance and magneto-optical Kerr effect measurements have been performed on L-shaped Permalloy nanowires for the characterization of the pinning properties in such a device.
DatasetDOI
Research data supporting "Controlling nucleation in perpendicularly magnetized nanowires through in-plane shape"
TL;DR: In this article, the authors proposed a method for controlling nucleation in perpendicularly magnetized nanowires through in-plane shape, which is similar to the one we present in this paper.
Journal ArticleDOI
A magnetic shift register with out-of-plane magnetized layers
Rhodri Mansell,A. Beguivin,Amalio Fernández-Pacheco,Jongmin Lee,Dorothée Petit,Russell P. Cowburn +5 more
TL;DR: Using out-of-plane magnetized layers, a lateral shift register made from discrete elements is demonstrated, where data bits consisting of neighboring layers with aligned magnetization are propagated synchronously under a symmetric applied magnetic field.
Journal ArticleDOI
Magnetic domain wall induced, localized nanowire reversal
TL;DR: In this paper, the authors demonstrate selective reversal of a ferromagnetic nanowire by the stray field from a domain wall, which is an alternative to localized Oersted fields and current induced switching.