The Wide Field InfraRed Survey Telescope-Astrophysics Focused Telescope Asset (WFIRST-AFTA) mission is a 2.4-m class space telescope that will be used across a swath of astrophysical research domains. JPL will provide a high-contrast imaging coronagraph instrument - one of two major astronomical instruments. In order to achieve the low noise performance required to detect planets under extremely low flux conditions, the electron multiplying charge-coupled device (EMCCD) has been baselined for both of the coronagraph's sensors - the imaging camera and integral field spectrograph. JPL has established an EMCCD test laboratory in order to advance EMCCD maturity to technology readiness level-6. This plan incorporates full sensor characterization, including read noise, dark current, and clock-induced charge. In addition, by considering the unique challenges of the WFIRST space environment, degradation to the sensor's charge transfer efficiency will be assessed, as a result of damage from high-energy particles such as protons, electrons, and cosmic rays. Science-grade CCD201-20 EMCCDs have been irradiated to a proton fluence that reflects the projected WFIRST orbit. Performance degradation due to radiation displacement damage is reported, which is the first such study for a CCD201-20 that replicates the WFIRST conditions. In addition, techniques intended to identify and mitigate radiation-induced electron trapping, such as trap pumping, custom clocking, and thermal cycling, are discussed.

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Technology advancement of the CCD201-20 EMCCD for the WFIRST coronagraph instrument: sensor characterization and radiation damage

The Advanced Technology Large Aperture Space Telescope (ATLAST) team identified five key technology areas to enable candidate architectures for a future large-aperture ultraviolet/optical/infrared (LUVOIR) space observatory envisioned by the NASA Astrophysics 30-year roadmap, "Enduring Quests, Daring Visions." The science goals of ATLAST address a broad range of astrophysical questions from early galaxy and star formation to the processes that contributed to the formation of life on Earth, combining general astrophysics with direct-imaging and spectroscopy of habitable exoplanets. The key technology areas are internal coronagraphs, starshades (or external occulters), ultra-stable large-aperture telescope systems, detectors, and mirror coatings. For each technology area, we define best estimates of required capabilities, current state-of-the-art performance, and current technology readiness level (TRL), thus identifying the current technology gap. We also report on current, planned, or recommended efforts to develop each technology to TRL 5.

Technology gap assessment for a future large-aperture ultraviolet-optical-infrared space telescope.

The NASA Astrophysics Divisions 30-Year Roadmap prioritized a future large-aperture space telescope operating in the ultra-violet-optical-infrared wavelength regime. The Association of Universities for Research in Astronomy envisioned a similar observatory, the High Definition Space Telescope. And a multi-institution group also studied the Advanced Technology Large Aperture Space Telescope. In all three cases, a broad science case is outlined, combining general astrophysics with the search for bio-signatures via direct-imaging and spectroscopic characterization of habitable exo-planets. We present an initial technology assessment that enables such an observatory that is currently being studied for the 2020 Decadal Survey by the Large UV-Optical Infrared (LUVOIR) surveyor Science and Technology Definition Team. We present here the technology prioritization for the 2016 technology cycle and define the required technology capabilities and current state-of-the-art performance. Current, planned, and recommended technology development efforts are also reported.

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Initial technology assessment for the Large-Aperture UV-Optical-Infrared (LUVOIR) mission concept study

The charge-coupled device (CCD) has been developed primarily as a compact image sensor for consumer and industrial markets, but is now also the preeminent visible and ultraviolet wavelength image sensor in many fields of scientific research including space-science and both Earth and planetary remote sensing. Today’s scientific or science-grade CCD will typically maximise pixel count, focal plane coverage, photon detection efficiency over the broadest spectral range and signal dynamic range whilst maintaining the lowest possible readout noise. The relatively recent re-emergence of complementary metal oxide semiconductor (CMOS) image sensor technology is arguably the most important development in solid-state imaging since the invention of the CCD. Current sub-micron CMOS technology now enables the integration on a single silicon chip of a large array of photodiode pixels alongside all of the ancillary electronics needed to address the array and digitise the resulting analogue video signal. Compared to the CCD, CMOS promises a more compact, lower mass, lower power and potentially more radiation tolerant camera.

CCD and CMOS sensors

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail.

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Vacancy-oxygen defects in silicon: the impact of isovalent doping

e2v have been developing new approaches to mitigate against the effects of radiation damage in CCD sensors. The first of these is our "rad-hard" device technology, primarily developed to reduce the flat-band voltage shift following ionising radiation. With this a very significant improvement has been demonstrated, the flat-band shift reducing from typically 100-200 mV/kRad(Si) with standard devices to only 6 mV/kRad(Si), plus an associated reduction in the increase in surface dark signal. The rad-hard process thereby allows
devices to be operated in environments with up to at least 500kRad total dose and/or with reduced shielding. 
Developments aimed at reducing the impact of proton radiation have included the manufacture of p-channel devices. Our initial data indicates that at -50°C the increase in charge transfer inefficiency is reduced by a factor of two times for parallel transfer and five times for serial transfer.

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A. Hussain

Papers

Improving radiation tolerance in e2v CCD sensors

Origin of orbital magnetic moment in e-beam evaporated SrRuO3 thin films studied by Soft X-Ray Magnetic Circular Dichroism