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A. L. Stankevich
Researcher at Russian Academy of Sciences
Publications - 39
Citations - 455
A. L. Stankevich is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Laser & Heterojunction. The author has an hindex of 10, co-authored 39 publications receiving 429 citations. Previous affiliations of A. L. Stankevich include Voronezh State University.
Papers
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Journal ArticleDOI
16 W continuous-wave output power from 100 [micro sign]m-aperture laser with quantum well asymmetric heterostructure
Nikita A. Pikhtin,Sergey O. Slipchenko,Z. N. Sokolova,A. L. Stankevich,D. A. Vinokurov,I. S. Tarasov,Zh. I. Alferov +6 more
TL;DR: In this paper, a 1.16 W continuous-wave front facet output optical power and 74% wallplug efficiency were achieved in 100 µm-aperture 1.06 µm-emitting laser diodes with 2-3 µmm cavity length.
Journal ArticleDOI
Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures
Sergey O. Slipchenko,D. A. Vinokurov,Nikita A. Pikhtin,Z. N. Sokolova,A. L. Stankevich,I. S. Tarasov,Zh. I. Alferov +6 more
TL;DR: In this article, it was shown that an asymmetric position of the active region in an ultrawide waveguide reduces the optical confinement factor for higher-order modes and raises the threshold electron density for these modes by 10 to 20%.
Journal ArticleDOI
High-Power Laser Diodes Based on Asymmetric Separate-Confinement Heterostructures
D. A. Vinokurov,S. A. Zorina,V. A. Kapitonov,A. V. Murashova,D. N. Nikolaev,A. L. Stankevich,M. A. Khomylev,V. V. Shamakhov,A. Yu. Leshko,A. V. Lyutetskii,T. A. Nalyot,Nikita A. Pikhtin,Sergey O. Slipchenko,Z. N. Sokolova,N. V. Fetisova,I. S. Tarasov +15 more
TL;DR: Asymmetric separate-confinement laser heterostructures with ultrawide waveguides, with an emission wavelength of ∼1080 nm, are grown by MOCVD as discussed by the authors.
Journal ArticleDOI
Effect of silicon on relaxation of the crystal lattice in MOCVD-hydride Al x Ga1 - x As:Si/GaAs(100) heterostructures
Pavel Seredin,A. V. Glotov,V. E. Ternovaya,E. P. Domashevskaya,I. N. Arsentyev,D. A. Vinokurov,A. L. Stankevich,I. S. Tarasov +7 more
TL;DR: In this article, the X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al petertodd x� Ga1 − x�� As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si /GaAs (100) structures doped with Si to a content of up to ∼1 at % are reported.
Journal ArticleDOI
Structural and spectral features of MOCVD Al x Ga y In1 - x - y As z P1 - z /GaAs (100) alloys
Pavel Seredin,A. V. Glotov,E. P. Domashevskaya,A. S. Lenshin,M. S. Smirnov,I. N. Arsentyev,D. A. Vinokurov,A. L. Stankevich,I. S. Tarasov +8 more
TL;DR: In1 − x − yAszP1 − z quinary alloys in the region of alloy compositions isoperiodic to GaAs in this paper, where X-ray diffraction technique and atomic force microscopy is shown that, on the surface of the heterostructures, there are nanometric objects capable of lining up along a certain direction.