A
A. M. Khan
Researcher at Integral University
Publications - 7
Citations - 31
A. M. Khan is an academic researcher from Integral University. The author has contributed to research in topics: Quantum well & Heterojunction. The author has an hindex of 3, co-authored 7 publications receiving 18 citations. Previous affiliations of A. M. Khan include Banasthali Vidyapith.
Papers
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Journal ArticleDOI
Optical gain characteristics of a novel InAlAs/InGaAs/GaAsSb type-II nano- heterostructure
A. M. Khan,Meha Sharma,M. I. Khan,Sandhya Kattayat,Garima Bhardwaj,Mahmoud Abu-Samak,Syed Hasan Saeed,Parvez Ahmad Alvi +7 more
TL;DR: In this paper, a type-II nano-heterostructure which could emit the radiations of the wavelength ˜1.55 μm was designed and simulated with the help k.p method by solving a 6 × 6 Luttinger-Kohn Hamiltonian.
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Uniaxial ultra-high pressure dependent tuning of optical gain of W-shaped Type-II GaAsSb/InGaAs/InAlAs nano-heterostructure
M. Imran Khan,A. M. Khan,Sandhya Kattayat,Garima Bhardwaj,Savaş Kaya,Saurabh Dalela,Shalendra Kumar,Parvez Ahmad Alvi +7 more
TL;DR: In this article, the authors analyzed the tunability of the optical gain characteristics of W-shaped type-II GaAsSb/InGaAs/InAlAs nano-heterostructure under the variable applied pressure ranging from 1 to 20 GPa along (001), (100) and (110) directions.
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Effects of Variation of Quantum Well Numbers on Gain Characteristics of Type-I InGaAsP/InP Nano-heterostructure
TL;DR: In this paper, the effects of variation of number of quantum wells in material gain characteristics and lasing wavelength of step index separately confined type-I InGaAsP/InP lasing nano-heterostructure for different carrier concentrations at room temperature in TE (Transverse Electric) mode of polarization.
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Band dispersion and optical gain calculations of staggered type GaAs0.4Sb0·6/In0.7Ga0.3As/GaAs0.4Sb0.6 nano-heterostructure under electric field and [100] strain
Riyaj,Jayprakash Vijay,A. M. Khan,Sandhya Kattayat,Savaş Kaya,M. Ayaz Ahmad,Shalendra Kumar,Shalendra Kumar,Parvez Ahmad Alvi,Amit Rathi +9 more
TL;DR: In this article, numerical calculations for the band dispersion in GaAs0.4Sb0·6/In0.7Ga0.3As/GaAs 0.6 staggered nano-scale heterostructure have been carried out for different values of the external electric field (0-200kV/cm) by solving the 6 × 6 k. p Hamiltonian.