M
Mohd Jawaid Siddiqui
Researcher at Aligarh Muslim University
Publications - 57
Citations - 562
Mohd Jawaid Siddiqui is an academic researcher from Aligarh Muslim University. The author has contributed to research in topics: Quantum well & Heterojunction. The author has an hindex of 13, co-authored 52 publications receiving 367 citations. Previous affiliations of Mohd Jawaid Siddiqui include Indian Institute of Technology Kanpur.
Papers
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Journal ArticleDOI
Synthesis of mesoporous SnO 2 /NiO nanocomposite using modified sol–gel method and its electrochemical performance as electrode material for supercapacitors
Bhaskar Varshney,Mohd Jawaid Siddiqui,A. Hakeem Anwer,M. Zain Khan,Faheem Ahmed,Abdullah Aljaafari,Hassan H. Hammud,Ameer Azam +7 more
TL;DR: These excellent electrochemical properties suggest that the SnO2/NiO nanocomposite can be used for high energy density supercapacitor electrode material.
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Electrical and Optical Properties of Nickel- and Molybdenum-Doped Titanium Dioxide Nanoparticle: Improved Performance in Dye-Sensitized Solar Cells
Aisha Malik,Salman Hameed,Mohd Jawaid Siddiqui,M.M. Haque,Khalid Umar,Asad U. Khan,Mohammad Muneer +6 more
TL;DR: In this paper, the electrical and photovoltaic properties of newly synthesized Ni and Mo-doped nanocrystalline undoped and doped TiO2 particles with different concentrations of nickel and molybdenum (1-7%) was synthesized using the hydrothermal method.
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An extensive study on simple and GRIN SCH-based In0.71Ga0.21Al0.08As/InP lasing heterostructures
TL;DR: In this paper, the authors proposed a model for simple and graded index (GRIN) separate confinement heterostructure (SCH)-based In0.71Ga0.21Al0.08As/InP singlequantum-well lasing heterostructures and studied the energy band structure along with conduction and valence band envelope functions and band offsets.
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Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure
TL;DR: In this article, the tunability of the optical gain under the high pressure effect in M-shaped type-II In0.30As/GaAs0.40Sb0.70Ga0.60 symmetric lasing nano-heterostructure designed for SWIR generation is reported.
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Field effective band alignment and optical gain in type-I Al0.45Ga0.55As/GaAs0.84P0.16 nano-heterostructures
H. K. Nirmal,S. G. Anjum,Pyare Lal,Amit Rathi,Saurabh Dalela,Mohd Jawaid Siddiqui,Parvez Ahmad Alvi +6 more
TL;DR: In this article, the behavior of field effective energy band alignment followed by the probability density of the charge carriers in the respective bands of type-I Al 0.45 Ga 0.55 As/GaAs 0.84 P 0.16 symmetric nano-scale-heterostructures is reported.