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Mohd Jawaid Siddiqui

Researcher at Aligarh Muslim University

Publications -  57
Citations -  562

Mohd Jawaid Siddiqui is an academic researcher from Aligarh Muslim University. The author has contributed to research in topics: Quantum well & Heterojunction. The author has an hindex of 13, co-authored 52 publications receiving 367 citations. Previous affiliations of Mohd Jawaid Siddiqui include Indian Institute of Technology Kanpur.

Papers
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Synthesis of mesoporous SnO 2 /NiO nanocomposite using modified sol–gel method and its electrochemical performance as electrode material for supercapacitors

TL;DR: These excellent electrochemical properties suggest that the SnO2/NiO nanocomposite can be used for high energy density supercapacitor electrode material.
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Electrical and Optical Properties of Nickel- and Molybdenum-Doped Titanium Dioxide Nanoparticle: Improved Performance in Dye-Sensitized Solar Cells

TL;DR: In this paper, the electrical and photovoltaic properties of newly synthesized Ni and Mo-doped nanocrystalline undoped and doped TiO2 particles with different concentrations of nickel and molybdenum (1-7%) was synthesized using the hydrothermal method.
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An extensive study on simple and GRIN SCH-based In0.71Ga0.21Al0.08As/InP lasing heterostructures

TL;DR: In this paper, the authors proposed a model for simple and graded index (GRIN) separate confinement heterostructure (SCH)-based In0.71Ga0.21Al0.08As/InP singlequantum-well lasing heterostructures and studied the energy band structure along with conduction and valence band envelope functions and band offsets.
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Tunability of optical gain (SWIR region) in type-II In0.70Ga0.30As/GaAs0.40Sb0.60 nano-heterostructure under high pressure

TL;DR: In this article, the tunability of the optical gain under the high pressure effect in M-shaped type-II In0.30As/GaAs0.40Sb0.70Ga0.60 symmetric lasing nano-heterostructure designed for SWIR generation is reported.
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Field effective band alignment and optical gain in type-I Al0.45Ga0.55As/GaAs0.84P0.16 nano-heterostructures

TL;DR: In this article, the behavior of field effective energy band alignment followed by the probability density of the charge carriers in the respective bands of type-I Al 0.45 Ga 0.55 As/GaAs 0.84 P 0.16 symmetric nano-scale-heterostructures is reported.