Surface plasmon are widely used to promote the exciton generation and light absorption in solar cells and photodetectors. In this work, a feasible approach for UV–vis-NIR photodetection using plasmon-enhanced silicon nanowires (SiNWs) and amorphous TiO2 heterostructure is presented. The photodetector shows excellent photo response up to 3.3 orders of magnitude enhancement with rise/decay times of 77/51 μs. Under small external bias (1V), the photodetector exhibits very high responsivity up to 49 A W−1 over a broadband wavelength range from 300–1100 nm. All the experimental procedures are performed at room temperature in ambient conditions. Its simple fabrication route and excellent performance make this photodetector distinct from similar architectures. Our finding offers new opportunities to engineer plasmon-based nanostructures in chemical sensors, optoelectronics and nanophotonic devices and applications.

Broadband nanoplasmonic photodetector fabricated in ambient condition

Abstract Surface plasmon are widely used to promote the exciton generation and light absorption in solar cells and photodetectors. In this work, a feasible approach for UV–vis-NIR photodetection using plasmon-enhanced silicon nanowires (SiNWs) and amorphous TiO 2 heterostructure is presented. The photodetector shows excellent photo response up to 3.3 orders of magnitude enhancement with rise/decay times of 77/51 μ s. Under small external bias (1V), the photodetector exhibits very high responsivity up to 49 A W −1 over a broadband wavelength range from 300–1100 nm. All the experimental procedures are performed at room temperature in ambient conditions. Its simple fabrication route and excellent performance make this photodetector distinct from similar architectures. Our finding offers new opportunities to engineer plasmon-based nanostructures in chemical sensors, optoelectronics and nanophotonic devices and applications. 

We demonstrate two distinct experimental processes involving the large-area growth of ordered and disordered silicon nanowire arrays (SiNWs) on a p-type silicon substrate using the metal-assisted chemical etching method. The two processes are based on the etching of monocrystalline silicon wafers by randomly distributed Ag films and ultra-thin Au films with ordered nano-mesh arrays, respectively, wherein the growth of SiNWs is implemented using a specific proportion of a HF-containing solution at room temperature. In this study, the microstructural change mechanisms for the two morphologically different arrays before and after annealing were investigated using Raman spectra. The effects of various mechanisms on the observed Raman scattering peak’s deviation from symmetry, redshift and broadening were analyzed. The evolution of the unstable amorphous structures of nanoscale materials during the high-temperature annealing process was observed via high-resolution scanning electron microscope (SEM) observations. The scattering peak parameters determined from the Raman spectra led to conclusions concerning the various mechanisms by which high-temperature annealing influences the microstructures of the two morphologically different SiNWs fabricated on the p-type silicon substrate. Therefore, the deviation of SiNWs from the monocrystalline silicon scattering peak at 520.05 cm−1 when changing the diameter of the nanowire columns was calculated to further analyze the effect of thermal annealing on Raman characteristics.

https://www.mdpi.com/2079-6412/13/4/793/pdf?version=1681961997

Effect of High-Temperature Annealing on Raman Characteristics of Silicon Nanowire Arrays

The developments of technology and computer digital systems are now pervasive across the globe and the world has rendered an invisible and unviable from day to day existence. The detailed assessment details of Mobile and Pervasive Computing applied to electrical and electronic devices, which are intangible and considering the context of evolutionary theory that refers to them as pervasive environments. The urban development concept, the future will be a connected web of networked computers and models of integrated networks system. Due to their broad usage in metropolitan environments, the signiﬁcant mobile devices have been enriched the urban planning strategy of ubiquitous computing, which is designed for the urban growth. According to the action plan, the data mining tools will be employed to assist the IDS building efforts in order to help alleviate these issues. This has found that the Intrusion Detection technologies have been used in conjunction with data mining strategies to spot attacks in the system. An Intrusion Detection System is used to control the network operations, used to track and filter out the unwanted data with decision tree. The mobile crowd sourcing technologies were applied to smart environments; the world by integrating and coordinating all of the technology resources. These algorithms are evaluated for their use in discovering the unknown attacks in the mobile communication systems.

A. Mohamedyaseen

Papers

The Fabrication of High-Anisotropy Silicon Nanowires Based on MACE Method for Photonic Sensor

Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire