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Adam M. Rawlett

Researcher at United States Army Research Laboratory

Publications -  53
Citations -  6966

Adam M. Rawlett is an academic researcher from United States Army Research Laboratory. The author has contributed to research in topics: Molecular electronics & Molecular memory. The author has an hindex of 26, co-authored 53 publications receiving 6806 citations. Previous affiliations of Adam M. Rawlett include Rice University & Yale University.

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Large On-Off Ratios and Negative Differential Resistance in a Molecular Electronic Device.

TL;DR: A molecule containing a nitroamine redox center was used in the active self-assembled monolayer in an electronic device that exhibited negative differential resistance and an on-off peak-to-valley ratio in excess of 1000:1.
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Conductance Switching in Single Molecules Through Conformational Changes

TL;DR: Over time the conductance switching of single and bundled phenylene ethynylene oligomers isolated in matrices of alkanethiolate monolayers is tracked, concluding that the switching is a result of conformational changes in the molecules or bundles, rather than electrostatic effects of charge transfer.
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Molecular random access memory cell

TL;DR: In this article, electronic programmable and erasable memory bits compatible with conventional threshold levels and a memory cell applicable to a random access memory have been demonstrated, with bit retention times > 15 min.
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Room-temperature negative differential resistance in nanoscale molecular junctions

TL;DR: In this article, active self-assembled monolayers containing the nitroamine [2′-amino-4,4′-di(ethynylphenyl)-5′-nitro-1-benzenethiolate] or the Nitro compound [4, 4′-mino]-2.2.
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A Bond-Fluctuation Mechanism for Stochastic Switching in Wired Molecules

TL;DR: It is argued that the cause of stochastic on-off switching in alkanethiols is the well-known mobility of molecules tethered to gold via a thiol linkage.