Adarsh Nigam

TL;DR: In this paper, the effect of self-heating of AlGaN/GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate has been carried out by Sentaurus TCAD simulator tool.

TL;DR: In this paper, a sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT).

TL;DR: In this paper, a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd2+) sensor with mercaptopropionic acid (MPA) and glutathione (GSH) functionalization was demonstrated.

TL;DR: In this paper, a PAN/(PAN-b-PMMA) derived electrospun nanoporous carbon nanofibers loaded on ZnO nanostructures was used to obtain the high surface area porous CNF which improved further sensing performance.

TL;DR: In this article, the authors introduce the recent trends in heavy metal ion sensing with semiconductor devices, including ion-sensitive field effect transistors (ISFETs) and AlGaN/GaN high electron mobility transistors(HEMTs) and semiconductor materials like graphene, two-dimensional metal dichalcogenides, decorated with different nanoparticles with appropriate functionalization.