Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
Adarsh Nigam,Thirumaleshwara N. Bhat,Saravanan Rajamani,Surani Bin Dolmanan,Sukant K. Tripathy,Mahesh Kumar +5 more
TLDR
In this paper, the effect of self-heating of AlGaN/GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate has been carried out by Sentaurus TCAD simulator tool.Abstract:
In order to study the effect of self-heating of AlGaN/ GaN high electron mobility transistors (HEMTs) characteristics fabricated on Si(111) substrate, simulations of 2DEG temperature on different drain voltages have been carried out by Sentaurus TCAD simulator tool. Prior to the electrical direct-current (DC) characteristics studies, structural properties of the HEMT structures were examined by scanning transmission electron microscopy. The comparative analysis of simulation and experimental data provided sheet carrier concentration, mobility, surface traps, electron density at 2DEG by considering factors such as high field saturation, tunneling and recombination models. Mobility, surface trap concentration and contact resistance were obtained by TCAD simulation and found out to be ∼1270cm2/Vs, ∼2×1013 cm-2 and ∼0.2 Ω.mm, respectively, which are in agreement with the experimental results. Consequently, simulated current-voltage characteristics of HEMTs are in good agreement with experimental results. The ...read more
Citations
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Journal ArticleDOI
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Bikramjit Chatterjee,Canberk Dundar,Thomas E. Beechem,Eric R. Heller,Dustin Kendig,Hyungtak Kim,Nazli Donmezer,Sukwon Choi +7 more
TL;DR: In this article, the authors examined self-heating in GaN-on-Si HEMTs via measurements of channel temperature using above-bandgap UV thermoreflectance imaging in combination with fully coupled electrothermal modeling.
Journal ArticleDOI
Real time detection of Hg2+ ions using MoS2 functionalized AlGaN/GaN high electron mobility transistor for water quality monitoring
Adarsh Nigam,Neeraj Goel,Thirumaleshwara N. Bhat,Md. Tawabur Rahman,Surani Bin Dolmanan,Qiquan Qiao,Sukant K. Tripathy,Mahesh Kumar +7 more
TL;DR: In this paper, a sensor for highly sensitive, selective, and rapid determination of the trace amount of toxic Hg2+ ions is developed for the first-time using molybdenum disulfide (MoS2) functionalized AlGaN/GaN high electron mobility transistor (HEMT).
Journal ArticleDOI
Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
TL;DR: This work reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process.
Journal ArticleDOI
AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts
Wojciech Wojtasiak,Marcin Goralczyk,D. Gryglewski,M. Zając,Robert Kucharski,Pawel Prystawko,Anna Piotrowska,M. Ekielski,Eliana Kamińska,Andrzej Taube,Marek Wzorek +10 more
TL;DR: AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated and the problem with obtaining low resistance ohmic contacts to low-dislocation high electron Mobility transistor (HEMT) structures was solved.
Journal ArticleDOI
MPA-GSH Functionalized AlGaN/GaN High-Electron Mobility Transistor-Based Sensor for Cadmium Ion Detection
Adarsh Nigam,Thirumaleshwara N. Bhat,Vijendra Singh Bhati,Surani Bin Dolmanan,Sukant K. Tripathy,Mahesh Kumar +5 more
TL;DR: In this paper, a novel AlGaN/GaN high-electron mobility transistor (HEMT)-based cadmium ion (Cd2+) sensor with mercaptopropionic acid (MPA) and glutathione (GSH) functionalization was demonstrated.
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