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Electronic Transport In Mesoscopic Systems

Introducing a novel heat sink comprising PCM and air - Adapted to electronic device thermal management

Boron nitride (BN) nanostructures with complementary functions to their carbon counterparts are one of the most intriguing nanomaterials. Here we devote a compact review on the syntheses of BN nanomaterials: typical zero-dimensional (0D) fullerenes and nanoparticles, one-dimensional (1D) nanotubes and nanoribbons, two-dimensional (2D) nanosheets as well as three-dimensional (3D) nanoporous BN. Combining low-dimensional quantum confinement and surface effects with unique physical and chemical properties of BN, e.g. excellent electric insulation, wide band gap, and high chemical and thermal stability, BN nanomaterials have drawn particular attention in a variety of potential applications, e.g. luminescence, functional composites, hydrogen accumulators, and advanced insulators, which are also reviewed.

Recent Progress on Fabrications and Applications of Boron Nitride Nanomaterials: A Review

The two Dimensional (2D) materials such as MXene and graphene, are most promising materials, as they have attractive properties and attract numerous application areas like sensors, supper capacitors, displays, wearable devices, batteries, and Electromagnetic Interference (EMI) shielding. The proliferation of wireless communication and smart electronic systems urge the world to develop light weight, flexible, cost effective EMI shielding materials. The MXene and graphene mixed with polymers, nanoparticles, carbon nanomaterial, nanowires, and ions are used to create materials with different structural features under different fabrication techniques. The aerogel based hybrid composites of MXene and graphene are critically reviewed and correlate with structure, role of size, thickness, effect of processing technique, and interfacial interaction in shielding efficiency. Further, freeze drying, pyrolysis and hydrothermal treatment is a powerful tool to create excellent EMI shielding aerogels. We present here a review of MXene and graphene with various polymers and nanomaterials and their EMI shielding performances. This will help to develop a more suitable composite for modern electronic systems.

Recent Advancement of Electromagnetic Interference (EMI) Shielding of Two Dimensional (2D) MXene and Graphene Aerogel Composites.

BCN materials with varied structures are attracting attention for promising diverse applications. BCN materials are recognized for adaptable electrical properties, outstanding mechanical behavior, exceptional chemical inertness, and high thermal stability, which make them advantageous for corresponding applications in harsh environments. In this article, we thoroughly summarize BCN material theory, growth, properties, and applications. Properties of BCN thin films depend on the composition and growth technique, which facilitates in developing BCN films prevailing between insulating BN and semimetallic graphite. Regarding this, the effects of synthesis parameters on various BCN properties are examined. Dry and wet etching, which are imperative for device processing, are explored. Prompted by the success of graphene, graphene-analogous BCN nanomaterials are being researched intensively due to their unique chemical and physical properties. This article highlights BCN nanomaterials, their synthesis in different dimensions, and properties with prospective applications. We focus on their energy applications in supercapacitors, batteries, oxygen and hydrogen evolution reaction, water purification, and CO2 adsorption along with other biosensing applications. Performance of BCN nanomaterials is discussed and compared with the prevailing benchmark materials to present an evolutionary perspective of BCN nanomaterial progress. Finally, unresolved issues are highlighted, and future development opportunities are identified.

A review of boron carbon nitride thin films and progress in nanomaterials

Band gap engineering of BC2N for nanoelectronic applications

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research Silicene is a mono-layer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and mass-less fermions in the band structure Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described After that, the theoretical studies to engineer the bandgap of silicene are reviewed Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

Unlike graphene which requires redesigned fabrication technique, silicene is predicted to be compatible with the silicon wafer technology. However, similar to graphene, the gapless properties of silicene hinder its application as field-effect transistors (FETs). By employing nearest neighbour tight-binding (NNTB) approach and Landuaer-Buttiker formalism, the analytical equations for electronic band structure , density of states (DOS), intrinsic carrier concentration, intrinsic velocity and ideal ballistic I–V characteristics have been derived. The simulated results using MATLAB show that a band gap of 0 . 78 e V has been induced in uniformly doped silicene with aluminium (AlSi3NW) in the zigzag direction. The device performance metrics extracted from the current-voltage (I–V) characteristics are subthreshold swing of 60 m V / d e c a d e and threshold voltage of 0.65 V under ideal conditions at room temperature. The results indicate that AlSi3NW device possesses good channel control and effective switching behaviour. The proposed model demonstrates that AlSi3 NW is a potential candidate for future nanoelectronic applications.

Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

The BC2 N which is one of the graphene-boron nitride nanocomposites is found to have tunable electronic properties besides having an analogous hexagonal structure with the graphene and boron nitride . To assure the capability of the BC 2 N nanowire (BC 2 NNW) in the nanoelectronics and optoelectronics applications, the analytical modelling has been carried out using MATLAB followed by the performance analysis in which the nature of the carrier statistic and the intrinsic velocity are discussed. The results show that the carrier concentration of the BC 2NNW is 7.143 × 107 m−1. Besides that, the intrinsic velocity of BC2NNW is dependent on the temperature in the non-degenerate regime while only dependent on the carrier concentration when entering the degenerate regime. Moreover, a comparable trend of the current-voltage (I-V) characteristics graph is obtained when compared with the published experimental result with an extracted subthreshold swing of 59.6mV/decade. These further assure the BC2N as one of the potential candidates in nanoelectronics and optoelectronics applications in the future.

Performance analysis of one dimensional BC 2 N for nanoelectronics applications

Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green.s function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green\'s function DOS of pristine and defective GNRs.

Afiq Hamzah

Papers

Band gap engineering of BC2N for nanoelectronic applications

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure

Performance analysis of one dimensional BC 2 N for nanoelectronics applications

Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures