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Electronic Transport In Mesoscopic Systems

This paper presents an overview of the work done on graphene in recent years. It explains the preparation techniques, the properties of graphene related to its physio-chemical structure and some key applications. Graphene, due to its outstanding electrical, mechanical and thermal properties, has been one of the most popular choices to develop the electrodes of a sensor. It has been used in different forms including nanoparticle and oxide forms. Along with the preparation and properties of graphene, the categorization of the applications has been done based on the type of sensors. Comparisons between different research studies for each type have been made to highlight their performances. The challenges faced by the current graphene-based sensors along with some of the probable solutions and their future opportunities are also briefly explained in this paper.

Graphene and its sensor-based applications: A review

http://ieeexplore.ieee.org/iel5/5/31324/01456901.pdf

Microelectronic circuits

Carbon nanotube (CNT) based biosensors are recognized to be a next generation building block for ultra-sensitive and ultra-fast biosensing systems. This article provides an overview on the recent expansion of research in the field of CNT-based biosensors. We start by first introducing the material structures and properties of CNTs. The basic and some new developed synthetic methods of CNTs are presented. This is followed by a collection of working principle and performance of different CNT-based biosensors. The roles and the processing methods of functionalized CNTs are summarized. After that, some of the practical applications and concerns in the field are addressed. What is more, the scientific and technological challenges in the field are discussed at the end of this review.

Carbon nanotube based biosensors

This paper provides a review on some of the significant research work done on wearable flexible sensors (WFSs). Sensors fabricated with the flexible materials have been attached to a person along with the embedded system to monitor a parameter and transfer the significant data to the monitoring unit for the further analyses. The use of wearable sensors has played a quite important role to monitor the physiological parameters of a person to minimize any malfunctioning happening in the body. This paper categorizes the work according to the materials used for designing the system, the network protocols, and different types of activities that were being monitored. The challenges faced by the current sensing systems and future opportunities for the WFSs regarding its market values are also briefly explained in this paper.

/pdf/wearable-flexible-sensors-a-review-4rnpuj98sl.pdf

Wearable Flexible Sensors: A Review

Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET) and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET) for applications in ultralarge-scale integration (ULSI) is reported. GNRFET is found to be distinctly superior in the circuit-level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon-based electronics. Budding GNRFET, using the circuit-level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy-delay product (EDP) and power-delay product (PDP) of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current-voltage (- and -), for subthreshold swing (SS), drain-induced barrier lowering (DIBL), and current on/off ratio for circuit implementation is given. GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

https://downloads.hindawi.com/journals/jnm/2014/879813.pdf

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

The carriers in a carbon nanotube (CNT), like in any quasi-1-dimensional (Q1D) nanostructure, have analog energy spectrum only in the quasifree direction; while the other two Cartesian directions are quantum-confined leading to a digital (quantized) energy spectrum. We report the salient features of the mobility and saturation velocity controlling the charge transport in a semiconducting single-walled CNT (SWCNT) channel. The ultimate drift velocity in SWCNT due to the high-electric-field streaming is based on the asymmetrical distribution function that converts randomness in zero-field to a stream-lined one in a very high electric field. Specifically, we show that a higher mobility in an SWCNT does not necessarily lead to a higher saturation velocity that is limited by the mean intrinsic velocity depending upon the band parameters. The intrinsic velocity is found to be appropriate thermal velocity in the nondegenerate regime, increasing with the temperature, but independent of carrier concentration. However, this intrinsic velocity is the Fermi velocity that is independent of temperature, but depends strongly on carrier concentration. The velocity that saturates in a high electric field can be lower than the intrinsic velocity due to onset of a quantum emission. In an SWCNT, the mobility may also become ballistic if the length of the channel is comparable or less than the mean free path.

/pdf/the-ultimate-ballistic-drift-velocity-in-carbon-nanotubes-2whvo8js9r.pdf

The ultimate ballistic drift velocity in carbon nanotubes

ResearchArticle The Ultimate Ballistic Drift Velocity in Carbon Nanotubes

The ballistic saturation velocity in a nanoscale metal-oxide-semiconductor field effect transistor (MOSFET) is revealed to be limited to the Fermi velocity in a degenerately induced channel appropriate for the quasi-two-dimensional nature of the inverted channel. The saturation point drain velocity is shown to rise with the increasing drain voltage approaching the intrinsic Fermi velocity, giving the equivalent of channel-length modulation. Quantum confinement effect degrades the channel mobility to the confining gate electric field as well as increases the effective thickness of the gate oxide. When the theory developed is applied to an 80nm MOSFET, excellent agreement to the experimental data is obtained.

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

In recent years, carbon nanotubes have received widespread attention as promising carbon-based nanoelectronic devices. Due to their exceptional physical, chemical, and electrical properties, namely a high surface-to-volume ratio, their enhanced electron transfer properties, and their high thermal conductivity, carbon nanotubes can be used effectively as electrochemical sensors. The integration of carbon nanotubes with a functional group provides a good and solid support for the immobilization of enzymes. The determination of glucose levels using biosensors, particularly in the medical diagnostics and food industries, is gaining mass appeal. Glucose biosensors detect the glucose molecule by catalyzing glucose to gluconic acid and hydrogen peroxide in the presence of oxygen. This action provides high accuracy and a quick detection rate. In this paper, a single-wall carbon nanotube field-effect transistor biosensor for glucose detection is analytically modeled. In the proposed model, the glucose concentration is presented as a function of gate voltage. Subsequently, the proposed model is compared with existing experimental data. A good consensus between the model and the experimental data is reported. The simulated data demonstrate that the analytical model can be employed with an electrochemical glucose sensor to predict the behavior of the sensing mechanism in biosensors.

/pdf/analytical-modeling-of-glucose-biosensors-based-on-carbon-4oldgn4ru7.pdf

Michael Loong Peng Tan

Papers

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

The ultimate ballistic drift velocity in carbon nanotubes

ResearchArticle The Ultimate Ballistic Drift Velocity in Carbon Nanotubes

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistor

Analytical modeling of glucose biosensors based on carbon nanotubes