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Aidong Li
Researcher at Nanjing University
Publications - 303
Citations - 7312
Aidong Li is an academic researcher from Nanjing University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 36, co-authored 280 publications receiving 6137 citations. Previous affiliations of Aidong Li include Wenzhou University & Chinese Academy of Sciences.
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Journal ArticleDOI
Ultraflexible and Energy‐Efficient Artificial Synapses Based on Molecular/Atomic Layer Deposited Organic–Inorganic Hybrid Thin Films
Chang Liu,Lin Zhu,Jingkai Weng,Yuchen Li,Zhuo Chen,Jin Lei,Tao-Qing Zi,Di Wu,Wei Fan,Shuang Chen,Bin Liang,Aidong Li +11 more
TL;DR: In this article , an organic-inorganic hybrid synaptic device consisting of 2 nm Al2O3 and 22 nm Al-based hydroquinone (Al‐HQ) sandwiched between Pt and poly(3,4−ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) electrodes is prepared on highly flexible cellophane by molecular/atomic layer deposition (MLD/ALD).
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Surface Reaction Mechanism of Atomic Layer Deposition of Titanium Nitride Using Tetrakis(dimethylamino)titanium and Ammonia
Yuanyuan Zhu,Zhongchao Zhou,X Zhang,Rui Xu,Yongjia Wang,Lina Xu,Hong-Ming Xiao,Xinhua Li,Aidong Li,Guoyong Fang +9 more
TL;DR: Using density functional theory calculations, the reaction mechanisms of the ALD of TiN using tetra(dimethylamino)titanium (TDMAT) and ammonia as precursors was investigated as discussed by the authors .
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Extremely Sensitive Wearable Strain Sensor with Wide Range Based on a Simple Parallel Connection Architecture
TL;DR: In this paper , an ultrasensitive wearable strain sensor over a broad range based on the simple parallel connection architecture of Ir•nanoparticles modified carbon nanotubes (Ir NPs@CNTs) and two Pt layers using a reticular patterned polymer substrate (Dragon Skin 30, (DS)) is reported.
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Growth and characterization of SrBi2Ta2O9 thin films prepared by rapid thermal annealing
TL;DR: In this article, the SrBi2Ta2O9 (SBT) thin films were prepared by metalorganic decomposition on Pt/TiO2/SiO2 /SiO 2/Si substrates with rapid thermal annealing (RTA) to investigate the crystal growth of the films.
Proceedings ArticleDOI
Properties of Hf 0.7 Zr 0.3 O 2 thin films chemical vapor deposited using a single-source precursor of anhydrous Hf x Zr 1−x (NO 3 4 precursors
TL;DR: In this paper, anhydrous Hf/Zr mixed-metal nitrate precursor Hf x Zr 1−x (NO 3 4 (HZN) was successfully synthesized and hafnium zirconate thin films were prepared by the chemical vapor deposition (CVD) technique from this precursor.