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Aidong Li
Researcher at Nanjing University
Publications - 303
Citations - 7312
Aidong Li is an academic researcher from Nanjing University. The author has contributed to research in topics: Thin film & Atomic layer deposition. The author has an hindex of 36, co-authored 280 publications receiving 6137 citations. Previous affiliations of Aidong Li include Wenzhou University & Chinese Academy of Sciences.
Papers
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Journal ArticleDOI
Growth behavior of high k LaAlO3 films on Si by metalorganic chemical vapor deposition for alternative gate dielectric application
Qiyue Shao,Aidong Li,Jin-Bo Cheng,Huiqin Ling,Di Wu,Zhiguo Liu,Yongjun Bao,Mu Wang,Nai-Ben Ming,Cathy Wang,H. W. Zhou,Bich-Yen Nguyen +11 more
TL;DR: In this paper, the LaAlO 3 (LAO) was used to replace SiO 2 as the gate dielectric material in metal-oxide-semiconductor field effect transistor.
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The Polymerization Effect on Synthesis and Visible-Light Photocatalytic Properties of Low-Temperature β-BiNbO4 Using Nb-Citrate Precursor.
Haifa Zhai,Haifa Zhai,Jizhou Kong,Jizhou Kong,Anzhen Wang,Hongjing Li,Tiantian Zhang,Aidong Li,Di Wu +8 more
TL;DR: The photodegradation of MV under the visible-light irradiation followed the pseudo-first-order kinetics according to the Langmuir-Hinshelwood model, and the obtained first-order rate constant and half-time are 2.85 × 10−2 min−1 and 24.3 min, respectively.
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Construction of Al-ZnO/CdS photoanodes modified with distinctive alumina passivation layer for improvement of photoelectrochemical efficiency and stability
Ruyi Wang,Xiaodong Li,Lu Wang,Xirui Zhao,Guangcheng Yang,Aidong Li,Congping Wu,Qing Shen,Yong Zhou,Zhigang Zou +9 more
TL;DR: A highly efficient photoanode system consisting of Al-doped ZnO NRs as effective electron-transfer layers and CdS as a light harvesting layer was rationally designed and was better than that of the conventional atomic layer deposition method.
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Impact of the Al/Hf ratio on the electrical properties and band alignments of atomic-layer-deposited HfO2/Al2O3 on S-passivated GaAs substrates
TL;DR: In this article, the interface structure and band alignments of various dielectric/GaAs structures have been investigated systematically, and the results indicate that ALD HfO2/Al2O3 nanolaminate structures could effectively tune the interface quality and band offset of gate Dielectric films on n-GaAs.