A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13 a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13 b via an Au wire 17.

Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor

A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the output light. The device can be used to produce broad-spectrum color light, such as white light.

Device and method for emitting output light using quantum dots and non-quantum fluorescent material

In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions.

Semiconductor light-emitting element

The performance characteristics of optically pumped laser heterostructures emitting in the UV-C spectral range between 272 and 279 nm are investigated. The laser heterostructures were grown by metal-organic vapor phase epitaxy on (0001) planar AlN/sapphire, epitaxially laterally overgrown (ELO) AlN/sapphire, and bulk AlN substrates with threading dislocation densities ranging from 2×1010 to 104 cm-2. We found that the defect density strongly affects the laser performance. The lowest pulse threshold energy density of 50 mJ/cm2 under resonant optical pumping condition was obtained for an AlGaN multiple quantum well laser grown pseudomorphically on low defect density bulk AlN substrate. Lasing was also observed for AlGaN MQW heterostructures grown on ELO AlN/sapphire templates. The laser emission in all lasers was TE polarized. However, no lasing was observed for heterostructures grown on high defect density AlN/sapphire.

Performance Characteristics of UV-C AlGaN-Based Lasers Grown on Sapphire and Bulk AlN Substrates

A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.

Group-III nitride semiconductor device

PROBLEM TO BE SOLVED: To provide a method of manufacturing GaN system compound semiconductor capable of growing AlGaN layer high in AlN composition ratio in a short time when forming a nitride semiconductor substrate layer by applying hetero ELO (epitaxial lateral overgrowth) technology. SOLUTION: In a process of forming a substrate semiconductor layer 10 for reducing a threading dislocation density of a GaN system compound semiconductor on a substrate 1; a seed crystal layer 13 mainly composed of GaN or AlGaN and constituting one portion of the substrate semiconductor layer portion 10 is formed in a chevron shape having a slant surface along edge portion, so that a film thickness may become thicker as it separates further from an edge portion of pattern viewed from above of the seed crystal layer 10 in a direction parallel to a substrate front surface. Furthermore, an upper substrate semiconductor layer 15 mainly composed of AlGaN and constituting one portion of the substrate semiconductor layer 10 is formed directly on the upper side of the seed crystal layer 13, or on an interlayer 14 formed along a front surface of the seed crystal layer 13 by supplying an element selected from alkaline earth metal or alkali metal so that its front surface may become flat. COPYRIGHT: (C)2006,JPO&NCIPI

Method of manufacturing garium nitride system compound semiconductor

PROBLEM TO BE SOLVED: To provide a method by which a III nitride semiconductor single crystal, which is low in dislocation and superior in crystallinity and can be used as a semiconductor substrate can be manufactured, and to provide the semiconductor substrate. SOLUTION: An AlN buffer layer 2 is formed on a (0001) sapphire substrate 1, and a GaN base layer 3 is formed on the layer 2. Then a recess 4, having a stepped bottom face, is formed by partially removing the base layer 3 by etching the layer 3 from its main surface. In addition, an AlN intermediate layer 5 is formed over the whole surface of the base layer 3, including the recess 4 and an AlGaN semiconductor layer 6, is formed on the intermediate layer 5, so as to fill the steps caused by the recess 4.

Method of manufacturing iii nitride semiconductor single- crystal, and method for using the iii nitride single- crystal semiconductor

PROBLEM TO BE SOLVED: To provide a p-type activation method capable of converting a GaN based compound semiconductor into a low resistance p-type semiconductor by low temperature or short time annealing even if hydrogen is contained substantially in an annealing atmosphere. SOLUTION: A GaN based compound semiconductor 7 implanted with p-type impurities is formed and after a hydrogen absorbable/permeable film 10 having an action for absorbing hydrogen in the GaN based compound semiconductor 7 and discharging it to the outside is formed on the surface thereof, the GaN based compound semiconductor 7 is annealed. Consequently, hydrogens bonding to p-type impurities implanted into the GaN based compound semiconductor 7 are released thus effecting p-type activation of the GaN based compound semiconductor 7. COPYRIGHT: (C)2005,JPO&NCIPI

p-TYPE ACTIVATION METHOD OF AlGaN BASED COMPOUND SEMICONDUCTOR

PROBLEM TO BE SOLVED: To form a good-quality gallium nitride-based compound semiconductor layer on a sapphire substrate by a halide vapor growth method. SOLUTION: A sapphire substrate 1 is cleaned and dried so as to be placed on a susceptor 14 which is installed inside a quartz tube 11 at a halide vapor growth apparatus 10. Then, a substrate temperature is set at 600 deg.C, NH3 as an N2 source is supplied at 400 to 800cc/min, HCl which is used to generate GaCl as a Ga source is supplied at 5 to 2cc/min, and N2 as a carrier gas is supplied at 2l/min. Thereby, GaCl as the reaction product of HCl with Ga placed on a Ga reservoir 12 is obtained so as to be supplied for 30 minutes, and an amorphous buffer layer composed of GaN or a buffer layer having a crystal structure in which an amorphous substance and a fine crystal exist so as to be mixed in grown on the substrate 1 to be a film thickness of about 0.2μm. In succession, the substrate temperature is set at 1,100 deg.C, the above respective gases are supplied for 30 minutes under the same condition as in the formation of the buffer layer, and a GaN layer which is flat and whose crystallinity is good is grown to be a film thickness of about 2μm.

Crystal growth method for gallium nitride-based compound semiconductor

PROBLEM TO BE SOLVED: To easily generate a semiconductor which is superior in unity of a polytype, and in which high crystal quality can be obtained SOLUTION: A smooth face 10a is polished and a scratch is formed Thus, a plurality of linear recesses 10b, 10b, 10b etc are formed in the smooth face 10a Step flow growth is performed by a proximity sublimating method Since side walls of the recesses 10b, 10b, 10b etc are exposed to the smooth face 10a at steep angles, atoms can be adsorbed in a following direction of the smooth face 10a with the side walls as starting points Namely, step flow growth can securely be performed COPYRIGHT: (C)2008,JPO&INPIT

Akasaki Isamu

Papers

Method of manufacturing garium nitride system compound semiconductor

Method of manufacturing iii nitride semiconductor single- crystal, and method for using the iii nitride single- crystal semiconductor

p-TYPE ACTIVATION METHOD OF AlGaN BASED COMPOUND SEMICONDUCTOR

Crystal growth method for gallium nitride-based compound semiconductor

Semiconductor, and method of manufacturing semiconductor