A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and an active layer between the n-type region and the p-type region. In such devices, there is provided with a super lattice layer comprising first layers and second layers which are nitride semiconductors having a different composition respectively. The super lattice structure makes working current and voltage of the device lowered, resulting in realization of more efficient devices.

Nitride semiconductor device

A nitride semiconductor element exhibiting low leakage current and high ESD tolerance includes an active layer of nitride semiconductor that is interposed between a p-sided layer and an n-sided layer, which respectively consist of a plurality of nitride semiconductor layers, the p-side layer including a p-type contact layer as a layer for forming p-ohmic electrodes, the p-type contact layer being formed by laminating p-type nitride semiconductor layers and n-type nitride semiconductor layers in an alternate manner.

Nitride semiconductor element

The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating light via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.

Semiconductor Light Emitting Device

A Group III nitride based semiconductor device is disclosed, comprising: a doped Group III nitride layer; and a gallium nitride based superlattice directly on the doped Group III nitride layer, the gallium nitride superlattice being doped with an n-type impurity and having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0 ≤ X < 1 and X is not equal to Y and wherein a thickness of a first of the alternating layers is less than a thickness of a second of the alternating layers.

Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures

A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.

Semiconductor light-emitting device and method of manufacturing the same

In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1Ga1-Y1N (Y1≧0) and a quantum well layer being made of InY2Ga1-Y2N (Y2>Y1 and Y2>0) on the first semiconductor layer; and forming a second semiconductor layer on the light-emitting layer, an uppermost barrier layer, which will become an uppermost layer of the light-emitting layer, is made thicker than the other barrier layers. Further, at the time of forming the second semiconductor layer, an upper surface of such uppermost barrier layer is caused to disappear so that the thickness of the uppermost barrier layer becomes substantially equal to those of the other barrier layers.

Semiconductor light-emitting device and manufacturing method thereof

PROBLEM TO BE SOLVED: To improve the crystallinity of a gallium nitride-based compound semiconductor by preventing the occurrence of warpage and cracking in the semiconductor. SOLUTION: A first layer 2 composed of SiO2 is formed on a silicon substrate 1 and the layer 2 has a grown area X and a non-grown area Y which are respectively formed in stripe- and grid-like states. In the grown area X, a second layer 3 composed of GaN is formed on the exposed area B of the substrate 1 which is exposed by removing the first layer 2 and also on the first layer 2 and, in the non-grown area Y, the GaN second layer 3 is not formed on the SiO2 first layer 2. Since the second layer 3 is not formed continuously on the whole surface of the substrate 1, the substrate 1 is not warped even when the coefficients of thermal expansion of the silicon and GaN are different from each other. In addition, cracking is not developed in the second layer 3, because the layer 3 is not stressed nor strained.

Gallium nitride-based compound semiconductor and its manufacture

PROBLEM TO BE SOLVED: To provide a group-III semiconductor element of a quantum well structure which can prevent the sublimation of a well layer at the time of forming a barrier layer therein, and can control its film thickness with good crystallinity and enhance luminous efficiency. SOLUTION: N2 or H2 gas is supplied at a flow rate of 20 liters/min, an NH3 gas is supplied at a flow rate of 10 liters/min and a TMG is supplied at a flow rate of 2.0×10 mol./min at a substrate temperature of 900 deg.C. to form a barrier layer 51 of GaN having a thickness of about 35 Å. Next, the substrate temperature is reduced down to 600 deg.C, and the supply amount of H2 or NH3 is made constant, under which condition TMG is supplied at a flow rate of 7.2×10 mol./min and TMI is supplied at a flow rate of 0.19×10 mol./min to form a well layer 52 of In0.20 Ga0.80 N having a thickness of about 35 Å. Subsequently, the substrate temperature is kept at 600 deg.C, N2 or H2 is supplied at a flow rate of 20 lit./min, NH3 is supplied at a flow rate of 10 lit./min, and TMG is supplied at a flow rate of 2.0×10 mol./min to form a cap layer 53. (a) Then the substrate temperature is increased from 600 deg.C to 900 deg.C, during which the cap layer 53 disappears due to pyrolysis reaction. (b) When the substrate temperature reaches 900 deg.C, the next barrier layer 51 is formed on the well layer 52 under these conditions.

Group-iii nitride semiconductor element and manufacture thereof

PROBLEM TO BE SOLVED: To simultaneously suppress cracks and through transition. SOLUTION: A mask 2, with which a group III nitride compound semiconductor is not epitaxially grown, is formed into lattice, and the surface of a wafer 1 is separately exposed so that an epitaxial growing region can be made into respectively independent small region. In such a case, a reaction-proofing layer mainly composed of a monocrystal is formed so that the chemical reaction of the wafer and the group III nitride compound semiconductor on the upper layer caused by stress and heat can not occur in a production process. Afterwards, a distortion relax layer is formed by alternately forming the group III nitride compound semiconductors of the same or different compositions within two different temperature ranges so that the stress of the wafer and the upper layer can be relaxed and the occurrence of through transition can be suppressed or through transition can be extinguished on the upper epitaxial layer. In the desired group III nitride compound semiconductor to be formed thereon, through transition can be suppressed, while preventing cracks.

Production method for group iii nitride compound semiconductor and group iii nitride compound semiconductor device

PROBLEM TO BE SOLVED: To form a good-quality gallium nitride-based compound semiconductor layer on a sapphire substrate by a halide vapor growth method. SOLUTION: A sapphire substrate 1 is cleaned and dried so as to be placed on a susceptor 14 which is installed inside a quartz tube 11 at a halide vapor growth apparatus 10. Then, a substrate temperature is set at 600 deg.C, NH3 as an N2 source is supplied at 400 to 800cc/min, HCl which is used to generate GaCl as a Ga source is supplied at 5 to 2cc/min, and N2 as a carrier gas is supplied at 2l/min. Thereby, GaCl as the reaction product of HCl with Ga placed on a Ga reservoir 12 is obtained so as to be supplied for 30 minutes, and an amorphous buffer layer composed of GaN or a buffer layer having a crystal structure in which an amorphous substance and a fine crystal exist so as to be mixed in grown on the substrate 1 to be a film thickness of about 0.2μm. In succession, the substrate temperature is set at 1,100 deg.C, the above respective gases are supplied for 30 minutes under the same condition as in the formation of the buffer layer, and a GaN layer which is flat and whose crystallinity is good is grown to be a film thickness of about 2μm.

Koike Masayoshi

Papers

Semiconductor light-emitting device and manufacturing method thereof

Gallium nitride-based compound semiconductor and its manufacture

Group-iii nitride semiconductor element and manufacture thereof

Production method for group iii nitride compound semiconductor and group iii nitride compound semiconductor device

Crystal growth method for gallium nitride-based compound semiconductor