A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13 a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13 b via an Au wire 17.

Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor

A device and method for emitting output light utilizes both quantum dots and non-quantum fluorescent material to convert at least some of the original light emitted from a light source of the device to longer wavelength light to change the color characteristics of the output light. The device can be used to produce broad-spectrum color light, such as white light.

Device and method for emitting output light using quantum dots and non-quantum fluorescent material

A method of forming a partially etched nitride-based compound semiconductor crystal layer includes the following steps. A non-crystal layer of a nitride-based compound semiconductor is formed. At least a part of the non-crystal layer is then etched to form a partially etched non-crystal layer before the partially etched non-crystal layer is crystallized to form a partially etched nitride-based compound semiconductor crystal layer.

Group-III nitride semiconductor device

A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.

Semiconductor Device and Semiconductor Substrate, and Method of Fabricating the Same

Method for forming group-III nitride semiconductor layer and group-III nitride semiconductor device

PURPOSE:To obtain a high-quality ZnS single crystal on the substrate by providing the ZnS powder at the high-temperature part in the quartz reaction tube along with H2 flown in and thus controlling GaP of the low-temperature part or temperature t and growing speed V of the GaAs substrate CONSTITUTION:The ZnS4 powder is provided at the high-temperature part of quartz tube 6 plus H2 flown in, and GaP of the low-temperature part or ZnS on GaAs substrate 5 is educed As these materials features the grid constant close to ZnS, a high-quality crystal can be educed onto the substrate but some crack is caused the growth layer when the substrate is returned into the room temperature after reaction since the expansion coefficients differ If the stress is lessended by giving a selective eduction via the SiO2 mask, the crack can be prevented However, the selective growth is impossible under t<800 degC Now, 800 degC<t<900 degC and Omu/h<v(growing speed)<20mu/h are satisfied with (950-t)/75 secured As a result, a high-quality and crackless ZnS crystal can be formed selectively on the GaP and GaAs substrate via the SiO2 mask

Vapor growth method

PROBLEM TO BE SOLVED: To provide a method by which a III nitride semiconductor single crystal, which is low in dislocation and superior in crystallinity and can be used as a semiconductor substrate can be manufactured, and to provide the semiconductor substrate. SOLUTION: An AlN buffer layer 2 is formed on a (0001) sapphire substrate 1, and a GaN base layer 3 is formed on the layer 2. Then a recess 4, having a stepped bottom face, is formed by partially removing the base layer 3 by etching the layer 3 from its main surface. In addition, an AlN intermediate layer 5 is formed over the whole surface of the base layer 3, including the recess 4 and an AlGaN semiconductor layer 6, is formed on the intermediate layer 5, so as to fill the steps caused by the recess 4.

Method of manufacturing iii nitride semiconductor single- crystal, and method for using the iii nitride single- crystal semiconductor

PROBLEM TO BE SOLVED: To provide a p-type activation method capable of converting a GaN based compound semiconductor into a low resistance p-type semiconductor by low temperature or short time annealing even if hydrogen is contained substantially in an annealing atmosphere. SOLUTION: A GaN based compound semiconductor 7 implanted with p-type impurities is formed and after a hydrogen absorbable/permeable film 10 having an action for absorbing hydrogen in the GaN based compound semiconductor 7 and discharging it to the outside is formed on the surface thereof, the GaN based compound semiconductor 7 is annealed. Consequently, hydrogens bonding to p-type impurities implanted into the GaN based compound semiconductor 7 are released thus effecting p-type activation of the GaN based compound semiconductor 7. COPYRIGHT: (C)2005,JPO&NCIPI

p-TYPE ACTIVATION METHOD OF AlGaN BASED COMPOUND SEMICONDUCTOR

PROBLEM TO BE SOLVED: To form a good-quality gallium nitride-based compound semiconductor layer on a sapphire substrate by a halide vapor growth method. SOLUTION: A sapphire substrate 1 is cleaned and dried so as to be placed on a susceptor 14 which is installed inside a quartz tube 11 at a halide vapor growth apparatus 10. Then, a substrate temperature is set at 600 deg.C, NH3 as an N2 source is supplied at 400 to 800cc/min, HCl which is used to generate GaCl as a Ga source is supplied at 5 to 2cc/min, and N2 as a carrier gas is supplied at 2l/min. Thereby, GaCl as the reaction product of HCl with Ga placed on a Ga reservoir 12 is obtained so as to be supplied for 30 minutes, and an amorphous buffer layer composed of GaN or a buffer layer having a crystal structure in which an amorphous substance and a fine crystal exist so as to be mixed in grown on the substrate 1 to be a film thickness of about 0.2μm. In succession, the substrate temperature is set at 1,100 deg.C, the above respective gases are supplied for 30 minutes under the same condition as in the formation of the buffer layer, and a GaN layer which is flat and whose crystallinity is good is grown to be a film thickness of about 2μm.

Crystal growth method for gallium nitride-based compound semiconductor

PROBLEM TO BE SOLVED: To provide a novel manufacturing method, with which dislocation density of semiconductor crystals in a semiconductor element can be reduced, and a semiconductor element including a semiconductor single-crystal layer, having a low dislocation density layer formed by this method. SOLUTION: A plurality of grooves 4 in stripes, having a width W and a depth d, are formed in a main surface 1A of a single-crystal plate 1 at intervals of P. Then, an intermediate layer 2 is formed to cover the grooves 4 on the main surface 1A of the single-crystal plate 1 and a semiconductor single crystal layer 3 is formed on this intermediate layer 2.

Amano Hiroshi

Papers

Vapor growth method

Method of manufacturing iii nitride semiconductor single- crystal, and method for using the iii nitride single- crystal semiconductor

p-TYPE ACTIVATION METHOD OF AlGaN BASED COMPOUND SEMICONDUCTOR

Crystal growth method for gallium nitride-based compound semiconductor

Semiconductor element and method of manufacturing the same